SWIR Sensors - Hamamatsu Photonics
48 SWIR Sensors from Hamamatsu Photonics meet your specification.
SWIR Sensors from Hamamatsu Photonics are listed on GoPhotonics. We have compiled a list of SWIR Sensors from the Hamamatsu Photonics website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Hamamatsu Photonics and their distributors in your region.
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Description: 1.12 to 1.85 µm Near-infrared two-dimensional image sensor with 320 x 256 pixels
SWIR Type:
InGaAs SWIR Sensor
Sensor Technology:
Indium Gallium Arsenide (InGaAs)
Sensor Type:
Area Scan Sensor
Cooling:
Three Stage TE Cooled
Package Type:
Hermatically Sealed, Chip
Pixel Size(H x V):
20 x 20 µm
Spectral Response Range:
1.12 to 1.85 µm
Dark Current:
0.3 to 3 pA
Supply Current:
30 to 120 mA
Supply Voltage:
3.2 to 5.1 V
more info
Description: 1.7 µm - 2.55 µm, InGaAs Area Image Sensor for Inspection Applications
SWIR Type:
InGaAs SWIR Sensor
Sensor Technology:
Indium Gallium Arsenide (InGaAs)
Sensor Type:
Area Scan Sensor
Cooling:
Three Stage TE Cooled
Package Type:
Hermatically Sealed, Chip
Pixel Size(H x V):
20 x 20 µm
Spectral Response Range:
1.7 to 2.55 µm
Dark Current:
30 to 300 pA
Supply Current:
30 to 120 mA
Supply Voltage:
3.2 to 5.1 V
more info
Description: 1.3 to 2.15 µm Near-infrared two-dimensional image sensor with 320 x 256 pixels
SWIR Type:
InGaAs SWIR Sensor
Sensor Technology:
Indium Gallium Arsenide (InGaAs)
Sensor Type:
Area Scan Sensor
Cooling:
Three Stage TE Cooled
Package Type:
Hermatically Sealed, Chip
Pixel Size(H x V):
20 x 20 µm
Spectral Response Range:
1.3 to 2.15 µm
Supply Current:
30 to 120 mA
Supply Voltage:
3.2 to 5.1 V
more info
Description: 0.95 to 1.69 µm Near-infrared two-dimensional image sensor with 320 x 256 pixels
SWIR Type:
InGaAs SWIR Sensor
Sensor Technology:
Indium Gallium Arsenide (InGaAs)
Sensor Type:
Area Scan Sensor
Cooling:
Three Stage TE Cooled
Package Type:
Hermatically Sealed, Chip
Pixel Size(H x V):
20 x 20 µm
Spectral Response Range:
0.95 to 1.69 µm
Dark Current:
0.03 to 0.3 pA
Supply Current:
30 to 120 mA
Supply Voltage:
3.2 to 5.1 V
more info
Description: 0.95 µm - 1.7 µm, InGaAs SWIR Sensor for Semiconductor Testing Applications
SWIR Type:
InGaAs SWIR Sensor
Sensor Technology:
Indium Gallium Arsenide (InGaAs)
Sensor Type:
Area Scan Sensor
Cooling:
Two-stage TE-Cooled
Package Type:
Hermatically Sealed, Chip
Pixel Size(H x V):
20 x 20 µm
Shutter Type:
Global Shutter
Spectral Response Range:
0.95 to 1.7 µm
Dark Current:
0.5 to 2.5 pA
Data Rate:
6.25 MHz(Video)
Supply Voltage:
4.9 to 5.1 V
more info
Description: Image sensor with 320 x 256 pixels developed for two-dimensional infrared imaging (Spectral response range: 1.70 to 2.55 µm)
SWIR Type:
InGaAs SWIR Sensor
Sensor Technology:
Indium Gallium Arsenide (InGaAs)
Sensor Type:
Area Scan Sensor
Cooling:
Two-stage TE-Cooled
Package Type:
Hermatically Sealed, Chip
Pixel Size(H x V):
20 x 20 µm
Shutter Type:
Global Shutter
Spectral Response Range:
1.7 to 2.55 µm
Dark Current:
0.3 to 30 pA
Data Rate:
12.5 MHz(Video)
Supply Current:
80 to 160 mA
Supply Voltage:
4.9 to 5.1 V
more info
Description: 1.12 µm to 1.9 µm, InGaAs Area Image Sensor for Foreign Object Detection Applications
SWIR Type:
InGaAs SWIR Sensor
Sensor Technology:
Indium Gallium Arsenide (InGaAs)
Sensor Type:
Area Scan Sensor
Cooling:
Single Stage TE Cooled
Package Type:
Through Hole
Pixel Size(H x V):
50 x 50 µm
Shutter Type:
Global Shutter
Spectral Response Range:
1.9 to 1.12 µm
Supply Voltage:
4.9 to 5.1 V
more info
Description: Near infrared image sensor (0.95 to 1.7 µm), Single video line: 512 pixels
SWIR Type:
InGaAs SWIR Sensor
Sensor Technology:
Indium Gallium Arsenide (InGaAs)
Sensor Type:
Line Scan Sensor
Package Type:
Ceramic, DIP
Pixel Size(H x V):
25 x 500 µm
Spectral Response Range:
0.95 to 1.7 µm
Clock Frequency:
0.1 to 5 MHz
Dark Current:
±0.5 to ±5 pA
Data Rate:
0.1 to 5 MHz(Video)
Supply Current:
80 to 100 mA
Supply Voltage:
4.7 to 5.3 V
more info
Description: Near infrared image sensor (0.95 to 1.7 µm), Cooled type, Single video line: 512 pixels
SWIR Type:
InGaAs SWIR Sensor
Sensor Technology:
Indium Gallium Arsenide (InGaAs)
Sensor Type:
Line Scan Sensor
Cooling:
Single Stage TE Cooled
Package Type:
Hermatically Sealed, Chip
Pixel Size(H x V):
25 x 500 µm
Spectral Response Range:
0.95 to 1.7 µm
Clock Frequency:
0.1 to 5 MHz
Dark Current:
±0.5 to ±5 pA
Data Rate:
0.1 to 5 MHz(Video)
Supply Current:
55 to 80 mA
Supply Voltage:
4.7 to 5.3 V
more info
Description: Image sensor with 320 x 256 pixels developed for two-dimensional infrared imaging (Spectral response range: 1.30 to 2.15 µm)
SWIR Type:
InGaAs SWIR Sensor
Sensor Technology:
Indium Gallium Arsenide (InGaAs)
Sensor Type:
Area Scan Sensor
Cooling:
Two-stage TE-Cooled
Package Type:
Hermatically Sealed, Chip
Pixel Size(H x V):
20 x 20 µm
Shutter Type:
Global Shutter
Spectral Response Range:
1.3 to 2.15 µm
Dark Current:
0.3 to 30 pA
Data Rate:
12.5 MHz(Video)
Supply Current:
80 to 160 mA
Supply Voltage:
4.9 to 5.1 V
more info
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