FPD510-FC-NIR

Photodetector by Menlo Systems

Note: Your Quotation Request will be directed to Menlo Systems.

The FPD510-FC-NIR from Menlo Systems is an InGaAs PIN Photodetector that has a spectral range of 950 nm - 1650 nm. It has a damage threshold of 3 mW and 3 dB bandwidth of DC - 200 MHz. This photodetector has a saturation limit of up to 100 &muW and frequency range of DC - 250 MHz. It has a rise time of 2 ns and maximum gain of 1.5 x 105. This photodetector has a noise equivalent power (NEP) of 3 pW/sqrt(Hz) and dark state noise level of -110 dBm/sqrt(Hz) (up to 5 MHz) & -135 dBm/sqrt(Hz) (for 5 MHz - 250 MHz).

The FPD510-FC-NIR has an integrated low noise radio frequency amplifier and SMF28 fiber-coupled output fiber that supports FC/APC & SMA female connectors. It requires a DC supply voltage from -12 V to +12 V and consumes 20 mA - 50 mA of current. This photodetector is available in a compact design that measures 60 mm x 50 mm x 20 mm and is ideal for efficient homodyne & heterodyne extraction of optical beat signals at frequencies up to 250 Mhz, detection of low light level signals, characterization of pulsed or modulated light sources features, and detection of chopped light sources applications.

Product Specifications

Product Details

  • Part Number
    FPD510-FC-NIR
  • Manufacturer
    Menlo Systems
  • Description
    950 nm - 1650 nm, InGaAs PIN Photodetector for Low Light Detection Applications

General Parameters

  • Photodetector Material
    Indium Gallium Arsenide (InGaAs)
  • Operation Mode
    Photovoltaic
  • Package Type
    Module with Connector
  • Spectral Band
    Near-IR, Infrared
  • Wavelength Range
    950 to 1650 nm
  • Photodetector Type
    PIN
  • Supply Voltage
    12 V
  • Rise Time
    2 ns
  • Bandwidth
    DC to 200 MHz
  • Cut-Off Frequency
    DC to 250 MHz
  • Noise equivalent power(NEP)
    3.0 pW/vHz
  • Package
    Module with Connector
  • Rise Fall Time
    2 ns (Rise)
  • Supply Current
    20 to 50 mA
  • Note
    Damage Threshold: 3 mW, Dark State Noise Level: -110 to -135 dBm, Gain: 1.5 x 10-5 V/W, Relative Humidity: 10 to 90% (Non-Condensing)

Environmental Conditions

  • Operating Temperature display
    10 to 40 Degree C
  • Storage Temperature
    -20 to 85 Degree C

Physical Properties

  • Dimensions
    60 x 50 x 20 mm

Applications

  • Application
    Efficient Homodyne and Heterodyne Extraction of Optical Beat Signals at Frequencies Up to 250 Mhz, Detection of Low Light Level Signals, Characterization of Pulsed or Modulated Light Sources Features, Detection of Chopped Light Sources

Connections & Interface

  • RF Connector
    SMA - Female

Technical Documents

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