Photodetectors

365 Photodetectors from 22 manufacturers listed on GoPhotonics

Photodetectors are devices that convert light signals into electrical signals, enabling their amplification and processing. Photodetectors from the leading manufacturers are listed below. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to the manufacturer and their distributors in your region.

Description: 830 nm Near-IR Module with Connector GaAs Photodetector
Spectral Band:
Near-IR
Photodetector Type:
PIN
Photodetector Material:
Gallium Arsenide (GaAs)
Fiber optic connector:
FC/UPC
RF Connector:
SMA
Package Type:
Module with Connector
Wavelength Range:
830 nm
Active Area Diameter:
60 µm
Supply Voltage:
3 VDC
Dark Current:
<0.5 nA
Responsivity/Photosensitivity:
0.38 A/W
Bandwidth:
>2.5 GHz
Rise Time:
<30 ps
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Description: 400 to 1000 nm VIS-IR Module with Connector Silicon, InGaAs Photodetector
Spectral Band:
Visible, Infrared
Photodetector Type:
PIN
Photodetector Material:
Silicon (Si), Indium Gallium Arsenide (InGaAs)
Package Type:
Module with Connector
Wavelength Range:
400 to 1000 nm
Active Area Diameter:
0.5 mm
Supply Voltage:
±15 V
Bandwidth:
0.01 to 100 MHz
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Description: 950 to 1650 nm Near-IR, Infrared Module with Connector InGaAs Photodetector
Spectral Band:
Near-IR, Infrared
Photodetector Type:
PIN
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
RF Connector:
SMA - Female
Package Type:
Module with Connector
Wavelength Range:
950 to 1650 nm
Supply Voltage:
12 V
Bandwidth:
DC to 200 MHz
Rise Time:
2 ns
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Description: 900 to 1700 nm Near-IR, Infrared Module with Connector InGaAs Photodetector
Spectral Band:
Near-IR, Infrared
Photodetector Type:
Avalanche
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
RF Connector:
BNC
Package Type:
Module with Connector
Wavelength Range:
900 to 1700 nm
Active Area Diameter:
0.2 mm
Supply Voltage:
12 V
Responsivity/Photosensitivity:
9 A/W
Bandwidth:
DC to 50 MHz
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Description: 800 to 1700 nm Near-IR, Infrared Module with Connector InGaAs Photodetector
Spectral Band:
Near-IR, Infrared
Photodetector Type:
PIN
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
Fiber optic connector:
FC/APC
RF Connector:
SMA
Package Type:
Module with Connector
Wavelength Range:
800 to 1700 nm
Supply Voltage:
12 V
Responsivity/Photosensitivity:
0.95 A/W
Bandwidth:
2.5 GHz
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Description: 800 to 1700 nm Near-IR, Infrared Module with Connector InGaAs Photodetector
Spectral Band:
Near-IR, Infrared
Photodetector Type:
Avalanche
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
Fiber optic connector:
FC/PC
RF Connector:
SMA
Package Type:
Module with Connector
Wavelength Range:
800 to 1700 nm
Active Area Diameter:
0.0024 mm
Dark Current:
0.3 nA
Bandwidth:
10 GHz
Rise Time:
35 ps
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Description: 900 to 1700 nm Near-IR, Infrared Module with Connector InGaAs Photodetector
Spectral Band:
Near-IR, Infrared
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
Fiber optic connector:
FC/PC
RF Connector:
SMA - Female
Package Type:
Module with Connector
Wavelength Range:
900 to 1700 nm (Spectral Range)
Supply Voltage:
15 V
Responsivity/Photosensitivity:
0.75 mA/mW
Bandwidth:
DC to 3 GHz
Rise Time:
<120 ps
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Description: 900 to 1700 nm Near-IR, Infrared Benchtop InGaAs Photodetector
Spectral Band:
Near-IR, Infrared
Photodetector Type:
PIN
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
RF Connector:
SMA
Package Type:
Benchtop
Wavelength Range:
900 to 1700 nm
Active Area Diameter:
0.032 mm
Supply Voltage:
6 VDC
Dark Current:
3 nA
Responsivity/Photosensitivity:
0.95 A/W
Bandwidth:
15 GHz
Rise Time:
0.025 ns
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Description: 900 nm Near-IR Through-Hole Silicon Photodetector
Spectral Band:
Near-IR
Photodetector Material:
Silicon (Si)
Package Type:
TO-Can
Wavelength Range:
900 nm
Active Area Diameter:
3 mm
Dark Current:
4 to 15 nA
Responsivity/Photosensitivity:
0.47 to 0.54 A/W
Rise Time:
10 ns
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Description: 1064 nm, 1570 nm Infrared Through-Hole InGaAs Photodetector
Spectral Band:
Infrared
Photodetector Type:
Avalanche
Photodetector Material:
Indium Gallium Arsenide (InGaAs)
Package Type:
Through-Hole
Wavelength Range:
1064 nm, 1570 nm
Active Area Diameter:
200 µm
Supply Voltage:
±5 V
Dark Current:
20 to 50 nA
Bandwidth:
50 to 100 MHz
Rise Time:
6 ns
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1 - 10 of 365 Photodetectors

What is a Photodetector? 

A Photodetector is a device that transforms light signals into electrical signals, enabling their amplification and processing. These detectors play an important role in optical fiber communication systems and directly impact the performance of a fiber optic communication link.

They are electronic devices used for light detection and in certain cases, these photodetectors can also detect and measure other forms of electromagnetic radiation directed at a specific device or circuitry. In simpler terms, photodetectors are electromagnetic sensors that convert electromagnetic radiation into electric signals, which can be measured using an appropriate device. The resulting electric signal is directly proportional to the intensity of the incident light or electromagnetic radiation.

Photodetectors come in various types, including semiconductor photodiodes, photomultiplier tubes, vacuum photodiodes, and pyroelectric detectors. Among them, semiconductor photodiodes are the most widely employed detectors in optical fiber systems. This is due to their favorable performance, compact size, compatibility with optical fibers, and relatively low cost. Semiconductor photodiodes are typically made from materials like silicon or germanium, as well as compound semiconductors such as GaAs, InGaAs, and others.

Block Diagram of Photodetector

The input signal from a source such as a laser or fiber optic cable is first sent to the optical system. The optical system may consist of lenses, mirrors, filters, or other optical elements that manipulate or condition the incoming light. These components help focus or direct the light onto the detector. The detector is the key component responsible for converting the optical signal into an electrical signal. Different types of detectors can be used, such as photodiodes, photomultiplier tubes (PMTs), avalanche photodiodes (APDs), or CCD/CMOS sensors, depending on the specific application requirements. The signal is then sent to the signal conditioning circuitry, where the components inside it process and amplify the electrical signal generated by the detector. It may include amplifiers, filters, or impedance matching circuits to enhance the signal quality and adapt it for further processing. This processed electrical signal from the signal conditioning block represents the output of the photodetector. It can be used for various purposes, such as data acquisition, further analysis, or transmission to other systems.

Working Principle of Photodetector

The fundamental principle behind photodetection with semiconductors is optical absorption. When light interacts with a semiconductor material, such as silicon or gallium arsenide, its absorption depends on the wavelength or color of the light. 

The energy carried by a photon, denoted as hν (where h is Planck's constant and ν is the frequency of the light wave), determines whether absorption occurs. The absorption of light by a semiconductor takes place when the energy of a photon exceeds the bandgap energy of the semiconductor. The bandgap energy is the minimum energy required for an electron in the valence band of the semiconductor to transition to the conduction band, where it can move freely. 

When absorption occurs, the incident photon transfers its energy to the semiconductor material. This energy is sufficient to promote electrons from the valence band to the conduction band, leaving behind vacant spaces called holes in the valence band. These electron-hole (e-h) pairs are generated as a result of absorption. By applying an electric field across the semiconductor material, the photogenerated e-h pairs are separated and driven away. This separation prevents the recombination of the e-h pairs and thereby generates a photocurrent within the external circuit.

Types of Optical Detectors used inside the Photodetectors

There are different types of photodetectors. Some of them are:

  • Photodiode
    • PN Photodiode
    • PIN Photodiode
    • Avalanche photodiode
  • Metal-Semiconductor-Metal Photodetector (MSM detector)
  • Photoconductive Detector

Important parameters of a Photodetector

  • Quantum Efficiency

A detector cannot capture and convert all incoming photons into electron-hole pairs. The quantum efficiency of a detector refers to the number of electrons generated per incident photon and is typically expressed as a percentage.

  • Responsivity

The quantum efficiency of a detector does not take into account the energy of the photons. Therefore, it is more accurate to define responsivity, which considers the photon energy. Responsivity of a detector is defined as the ratio of the generated photocurrent (Ip) to the incident optical power (Po) on the detector.

Applications of Photodetectors

Photodetectors have a wide range of applications across various industries. They are a fundamental component of optical fiber communication systems. These detectors convert light signals into electrical signals, enabling the transmission of data over long distances with minimal loss.

Photodetectors, such as image sensors, are used in digital cameras and imaging devices to capture and convert light into digital images. They play a crucial role in photography, video recording, and surveillance systems.

These detectors are used in medical devices for diagnostics and monitoring purposes. They are utilized in pulse oximeters to measure oxygen saturation levels in the blood, in photoplethysmography devices for measuring heart rate and blood flow, and in optical coherence tomography for imaging internal structures in medical imaging.

Photodetectors are also employed in environmental monitoring systems to measure various parameters such as air quality, pollutant levels, and radiation. They are used in devices like gas sensors, particulate matter detectors, and UV sensors.

They are widely used in industrial automation for tasks such as object detection, position sensing, and quality control. These detectors enable accurate and reliable detection of objects, presence or absence of materials, and precise positioning in manufacturing processes.

Photodetectors play a significant role in remote sensing applications, including satellite imaging and Earth observation. They capture and analyze electromagnetic radiation from the Earth's surface to gather information about vegetation, weather patterns, land use, and more.

These detectors are utilized in automotive applications such as collision avoidance systems, lane departure warning systems, and adaptive lighting. They help in detecting obstacles, measuring distances, and improving safety in vehicles.

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