Photodiodes

1972 Photodiodes from 47 manufacturers listed on GoPhotonics

Find and Compare Photodiodes from the leading manufacturers on GoPhotonics. Use the paraametric search tools to narrow down products based on your requirement.

Description:Extended InGaAs Photodiodes
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
2.35 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 25 uA
Capacitance:
60 to 1040 pF
Responsivity/Photosensitivity:
1.25 to 1.40 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description:High Speed Circular Photodiode Ideal for Radiation Detection
Photodetector Type:
PIN
Operation Mode:
Photoconductive
Dark Current:
100 nA
Capacitance:
1 nF( 0 V), 85 pF(150 V)
Responsivity/Photosensitivity:
0.05 to 0.25 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Description:UV Enhanced Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
250 to 1100 nm
Dark Current:
6 to 30 nA
Capacitance:
102 to 345 pF
Responsivity/Photosensitivity:
0.14 to 0.18 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
more info
Description:Long Wavelength Enhanced Silicon Avalanche Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
900 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 100 nA
Capacitance:
2 to 4 pF
Responsivity/Photosensitivity:
4 to 75 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description:1.0mm NIR (400-1000nm), Si APD
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Dark Current:
0.20 to 2.00 nA
Capacitance:
6 pF
Responsivity/Photosensitivity:
Photosensitivity: 0.5 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
more info
Description:SMT PIN Photodiode, Radiant Sensitive Area 1 x 1 mm², with and w/o daylight filter
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
380 to 1100 nm
Dark Current:
1 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
Spectral sensitivity: 0.65 A / W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
more info
Description:320 to 1100 nm, 35 ns Rise Time, 75.4 mm2 Area Si Detector
Photodetector Type:
PN
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.9 to 10 nA
Capacitance:
150 pF
Responsivity/Photosensitivity:
0.1 to 0.72 A/W
Package Type:
Module with Connector
Module:
Yes
more info
Description:PIN diode 95 mil
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Dark Current:
Reverse dark current: 2 to 5 nA
Capacitance:
17 to 48 pF
Package Type:
Chip
Configuration:
Single
Channels:
Single
more info
Description:InGaAs Avalanche Photodiode (APD) 10 Gbps Chip on Carrier with Integrated Lens
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
more info
Description:Inversion Layer Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
254 nm
Capacitance:
2500 pF
Responsivity/Photosensitivity:
0.09 to 0.14 A/W
Channels:
Single
more info

Photodiodes from the Leading Manufacturers

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