Photodiodes

1903 Photodiodes from 51 manufacturers listed on GoPhotonics

Find and Compare Photodiodes from the leading manufacturers on GoPhotonics. Use the paraametric search tools to narrow down products based on your requirement.

Description: Lithium Tantalate Doped Dual-Channel Pyroelectric Detector from UV to LWIR Range
Photodetector Type:
PN
Photodiode Material:
Pyroelectric, LiTaO3
Wavelength Range:
2.95 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
60000 to 120000 V/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Dual
Module:
No
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Description: Uncooled PbSe Packaged IR Detectors
Photodiode Material:
PbSe
Wavelength Range:
3.6 to 3.8 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
4.75 x 103 to 1.5 x 104 V/W
Package Type:
TO-Can
Channels:
Single
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Description: Blue Enhanced Photoconductive Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Dark Current:
5 to 15 nA
Capacitance:
120 pF
Responsivity/Photosensitivity:
0.15 to 0.17 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: Normal Response, 3.2mm2, Silicon Detector
Photodiode Material:
Silicon
Dark Current:
0.15 nA
Capacitance:
45 pF
Responsivity/Photosensitivity:
Photosensitivity: 0.65 A/W
Package Type:
Through-Hole, Leaded
Configuration:
Single
Channels:
Single
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Description: SMT PIN Photodiode, Radiant Sensitive Area 1 x 1 mm², with and w/o daylight filter
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1100 nm
Dark Current:
1 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
Spectral sensitivity: 0.65 A / W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
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Description: 320 to 1100 nm, 35 ns Rise Time, 75.4 mm2 Area Si Detector
Photodetector Type:
PN
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.9 to 10 nA
Capacitance:
150 pF
Responsivity/Photosensitivity:
0.1 to 0.72 A/W
Package Type:
Module with Connector
Module:
Yes
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Description: PIN diode ambient light 28 mil
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
560 nm
Dark Current:
Reverse dark current: 0.1 to 2 nA
Capacitance:
28 pF
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: Photoconductive Devices
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Dark Current:
5 to 10 nA
Capacitance:
8 to 50 pF
Responsivity/Photosensitivity:
0.47 to 0.54 A/W
Package Type:
Through-Hole
Channels:
Single
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Description: PIN Photodiode Module for High-Speed Optical Communication Systems
Photodetector Type:
PIN
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 1.5 nA
Capacitance:
0.25 to 0.3 pF
Responsivity/Photosensitivity:
0.65 to 0.7 A/W
Package Type:
PCB
Module:
Yes
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1 - 10 of 1903 Photodiodes

Photodiodes from the Leading Manufacturers

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