Photodiodes

1910 Photodiodes from 52 manufacturers listed on GoPhotonics

Find and Compare Photodiodes from the leading manufacturers on GoPhotonics. Use the paraametric search tools to narrow down products based on your requirement.

Description: Silicon/InGaAs Avalanche Photodiode Modules from 400 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs, Silicon
Wavelength Range:
400 to 1700 nm
Responsivity/Photosensitivity:
0.27 to 500 MV/W
Package Type:
Module with Connector
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Description: Uncooled PbSe Packaged IR Detectors
Photodiode Material:
PbSe
Wavelength Range:
3.6 to 3.8 µm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
6.0 x 103 to 1.0 x 104 V/W
Package Type:
TO-Can
Channels:
Single
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Description: Planar Photodiode with BG-18 Filter
Photodetector Type:
Planar
Photodiode Material:
Silicon
Wavelength Range:
400 to 700 nm
Dark Current:
100 nA
Capacitance:
40 pF
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: Normal Response, 0.20mm2, Silicon Detector
Photodiode Material:
Silicon
Dark Current:
0.01 nA
Capacitance:
4 pF
Responsivity/Photosensitivity:
Photosensitivity: 0.65 A/W
Package Type:
Through-Hole, Leaded
Configuration:
Single
Channels:
Single
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Description: PIN Photodiode in 5 mm (T1 ¾) Plastic Package, Radiant Sensitive Area 1 x 1 mm², Half Angle ±10 °
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1100 nm
Dark Current:
1 to 5 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
Spectral sensitivity: 0.65 A / W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: 320 to 1100 nm, 35 ns Rise Time, 75.4 mm2 Area Si Detector
Photodetector Type:
PN
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.9 to 10 nA
Capacitance:
150 pF
Responsivity/Photosensitivity:
0.1 to 0.72 A/W
Package Type:
Module with Connector
Module:
Yes
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Description: PIN diode ambient light 28 mil
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
560 nm
Dark Current:
Reverse dark current: 0.1 to 2 nA
Capacitance:
28 pF
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: High Speed GaAs Arrays
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
850 nm
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.63 A/W
Configuration:
Array
Channels:
Single
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Description: PIN photodiode module, 1000-1650 nm, 2 GHz, 50 mW
Photodetector Type:
PIN
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 0.16 nA
Capacitance:
0.65 to 0.8 pF(Chip), 0.95 to 1.1 pF(Total Capacit...
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Package Type:
PCB
Module:
Yes
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1 - 10 of 1910 Photodiodes

Photodiodes from the Leading Manufacturers

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