Photodiodes

1822 Photodiodes from 42 manufacturers listed on GoPhotonics

Find and Compare Photodiodes from the leading manufacturers on GoPhotonics. Use the paraametric search tools to narrow down products based on your requirement.

Description:900 - 3500 nm, InAs Substrate based on heterostructures IR Detector
Photodiode Material:
InAs
Wavelength Range:
900 to 3500 nm
Dark Current:
0.15 to 1 nA
Capacitance:
1000 pF
Responsivity/Photosensitivity:
1.05 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
more info
Description:13.5 nm, Directly-Deposited Integrated Thin Film Filter Photodiode
Photodetector Type:
PN
Wavelength Range:
12 to 18 nm
Operation Mode:
Photovoltaic
Capacitance:
5 to 20 pF
Responsivity/Photosensitivity:
0.08 to 0.1 A/W
Package Type:
Ceramic
Configuration:
Single
more info
Description:Blue Enhanced Photoconductive Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Dark Current:
150 to 300 nA
Capacitance:
100 pF
Responsivity/Photosensitivity:
0.15 to 0.17 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
more info
Description:InGaAs and Si PIN Diodes - Quadrant Detectors - UV-Enhanced
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Capacitance:
630 pF
Responsivity/Photosensitivity:
0.62 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Quad
more info
Description:InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
more info
Description:UV Enhanced Response, 15mm2, Silicon Detector
Photodiode Material:
Silicon
Capacitance:
800 pF
Responsivity/Photosensitivity:
Photosensitivity: 0.14 A/W
Package Type:
Through-Hole, Leaded
Configuration:
Single
Channels:
Single
more info
Description:PIN Photodiode in Sidelooker Package, Radiant Sensitive Area 2.65 x 2.65 mm², Half Angle ±60 °, Daylight Filter
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
740 to 1100 nm
Dark Current:
2 to 30 nA
Capacitance:
72 pF
Responsivity/Photosensitivity:
Spectral sensitivity: 0.65 A / W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
more info
Description:Up to 2.2 µm Extended InGaAs Panchromatic PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
up to 2200 nm
Dark Current:
0.05 to 50 µA
Capacitance:
40 to 5200 pF
Responsivity/Photosensitivity:
1.40 A/W
Package Type:
Through-Hole
Configuration:
Single
Module:
Yes
more info
Description:100 mm2 Active Area Directly-Deposited Thin-Film Filter Photodiode
Photodetector Type:
PN
Wavelength Range:
18 to 80 nm
Operation Mode:
Photoconductive
Dark Current:
8 to 25 nA
Capacitance:
220 to 350 pF
Responsivity/Photosensitivity:
0.08 to 0.1 A/W@13.5 nm
Package Type:
Ceramic
Configuration:
Single
more info
Description:Red Enhanced Ultra Low Capacitance Photodiodes Leaded Packages
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Dark Current:
110 to 425 nA
Capacitance:
22 to 235 pF
Responsivity/Photosensitivity:
0.50 to 0.55 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
more info

Photodiodes from the Leading Manufacturers

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