https://cdn.gophotonics.com/news/csm_lcdg_ial_series_0adaf3fb6b_639153036958855318.webp712370

GoPhotonics is showcasing a range of advanced Photodiodes designed to support applications spanning industrial automation, distributed sensing, LiDAR, spectroscopy, medical diagnostics, and optical communication. With technologies including silicon PIN photodiodes, avalanche photodiodes (APDs), InGaAs detectors, and infrared PbSe photodiodes, these solutions address a wide range of wavelength requirements and sensing challenges.

57-508 Silicon PIN Photodiode for Low Signal Detection

The 57-508 from Edmund Optics is a Silicon PIN Photodiode designed for low signal detection applications. The unbiased photodiode offers a detectivity of 4.5 x 10¹² cm·√Hz/W and a responsivity of 0.2 A/W at 410 nm, enabling reliable optical detection in low-light environments.

The device features a 0.81 mm² square active area, 60 pF terminal capacitance, and a rise time of 0.02 µs at 0 V and 410 nm. It also provides a 600 MΩ shunt resistance and a noise equivalent power (NEP) of 2 x 10^-14 W/√Hz. Equipped with a quartz protective window and blue-enhanced response, the photodiode is housed in a TO-18 package measuring 0.21 in x 0.2 in x 0.1 in.

C30733EQC-3 APD for Distributed Fiber Sensing

The C30733EQC-3 from Excelitas Technologies is an InGaAs/InP Avalanche Photodiode (APD) optimized for distributed fiber sensing applications. Operating across a spectral range of 900 nm to 1700 nm, the photodiode provides responsivity values of 0.94 A/W at 1550 nm and 0.65 A/W at 1650 nm, with a 2 GHz bandwidth and gain of 40 M.

The device features a 30 µm active area, 0.2 ns rise/fall time, and quantum efficiency exceeding 75%, while maintaining polarization-dependent responsivity of ±1.5%. It also offers low noise characteristics, including NEP values as low as 6.5 fW/√Hz, dark current down to 0.5 nA, and dark noise of 0.3 pA/√Hz.

Available in a fiber-pigtailed package measuring 43 mm x 17 mm x 7.5 mm, the photodiode includes 1 m single-mode (SM-9/125) fiber pigtails and supports FC/APC connectors, making it suitable for distributed temperature sensing (DTS) and distributed acoustic sensing (DAS) applications.

SAR1500H1B Silicon APD for LiDAR and Range Finding

The SAR1500H1B from Laser Components is a Silicon Avalanche Photodiode developed for range finding and LiDAR systems. Operating over a wavelength range of 400 nm to 1000 nm, the device delivers a bandwidth of DC to 10 MHz and peak sensitivity at 905 nm.

The photodiode integrates a SAR1500 detector with a hybrid preamplifier, enabling responsivity values of 2.7 MV/W at 540 nm, 4 MV/W at 650 nm, and 5 MV/W at 905 nm. It also provides low noise performance, with a minimum NEP of 30 fW/√Hz at 905 nm, output noise density of 150 nV/√Hz, and input referred noise density of 1.5 pA/√Hz.

Requiring a 5 V DC supply voltage, the photodiode consumes 30 mA current and dissipates 300 mW power. It features a 1.5 mm active area diameter and is packaged in a hermetically sealed TO-5 enclosure measuring 18.2 mm x 15.2 mm, supporting applications including laser scanners, spectroscopy, fluorescence, medical systems, and optical communication.

MTSM2601SMF2-150 InGaAs PIN Photodiode for Broadband Detection

The MTSM2601SMF2-150 from Marktech Optoelectronics is an InGaAs PIN Photodiode designed for broadband optical detection across wavelengths from 800 nm to 2600 nm.

The photodiode has a 1.5 mm active area, 1.24 A/W responsivity, and 72% quantum efficiency, supporting efficient signal detection across extended infrared wavelengths. Additional specifications include a 5.56 kΩ shunt resistance, 10 nA to 62 µA dark current, and 120 µA to 250 µA light current.

Packaged in a hermetically sealed surface mount housing measuring 5 mm x 5 mm x 1.5 mm, the photodiode is suited for high-speed optical communication, industrial control, gas and water analysis, LiDAR, and medical applications.

BXT2-17TF PbSe Photodiode for Infrared Gas Analysis

The BXT2-17TF from Opto Diode Corporation is a Lead Selenide (PbSe) Photodiode developed for infrared sensing applications between 4.3 µm and 4.7 µm.

The detector features an active element area of 1 mm² and a minimum detectivity of 2.4 x 10¹⁶ cm·√Hz/W, along with a minimum responsivity of 1.2 x 10² V/W. It includes a 4.7 µm bandpass silicon filter window to support precise infrared detection and offers a resistance range of 1.5 MΩ to 7 MΩ with a time constant of 8 µs to 14 µs.

Available in a two-stage cooled TO37 package, the photodiode is suitable for gas analysis, emissions monitoring, spectroscopy, process control systems, thermal imaging, medical systems, and defense & security applications.

By covering visible, near-infrared, and mid-infrared wavelengths, these photodiodes demonstrate how advanced optical detection technologies continue to support increasingly demanding sensing, spectroscopy, and industrial monitoring applications.

Click here to learn more about photodiodes.