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GoPhotonics has highlighted a selection of Phototransistors designed for optical sensing, light detection, automation, and control applications. The featured devices from Vishay, Marktech Optoelectronics, Optrans America, ams OSRAM, and Light in Motion provide sensitivity across visible and near-infrared wavelengths, offering engineers versatile solutions for industrial equipment, instrumentation, electronic controls, and optical monitoring systems.
BPW85 for Optical Control and Detection Applications
The BPW85 from Vishay Intertechnology is a silicon NPN phototransistor housed in a compact 3 mm T-1 leaded package. Designed for electronic control and drive circuits, the device offers high photo sensitivity, high radiant sensitivity, and fast switching times for reliable optical signal detection. It responds to both visible and near-infrared radiation across a spectral range of 450 nm to 1080 nm, with peak sensitivity at 850 nm. The phototransistor features a half-sensitivity angle of ±25°, allowing focused light detection in applications where directional response is important. Its compact package and broad spectral response make it suitable for optical switches, position sensing, and industrial control systems.
MTD8600T-T for Near-Infrared Sensing Systems
The MTD8600T-T from Marktech Optoelectronics is a silicon NPN phototransistor optimized for near-infrared detection applications. Featuring peak sensitivity at 880 nm, the device is supplied in a TO-18 metal can package that provides mechanical durability and stable performance. It offers a wide viewing angle of 110°, enabling effective detection of light from multiple directions. The phototransistor supports collector currents up to 50 mA and operates across temperatures ranging from -30°C to 100°C. Its combination of NIR sensitivity, wide angular response, and robust packaging makes it suitable for optical sensors, proximity detection systems, and measurement instrumentation.
PTC080M3B for Wide-Angle Optical Detection
The PTC080M3B from Optrans America is a silicon phototransistor packaged in a compact 3 mm ceramic housing with a domed lens. The device operates across a broad spectral range of 400 nm to 1100 nm and exhibits peak sensitivity at 880 nm. One of its key features is a wide 160° angular response, allowing it to detect incident light over a large field of view. The phototransistor also provides rise and fall times of 10 µs, supporting applications that require responsive optical detection. Its ceramic construction and wide-angle sensitivity make it well suited for optical sensing, monitoring equipment, and detector systems where broad coverage is required.
BP 103 for Industrial Photodetection Applications
The BP 103 from ams OSRAM is a silicon NPN phototransistor supplied in a TO-18 metal package. The device provides spectral sensitivity from 450 nm to 1100 nm and achieves peak sensitivity near 850 nm, making it suitable for both visible and near-infrared detection. It delivers a typical photocurrent of 200 µA and features fast rise and fall times of 8 µs for efficient signal response. With a beam angle of approximately 110°, the phototransistor offers broad-area light detection while maintaining reliable sensitivity. The robust metal-can construction and industrial operating temperature range support deployment in automation systems, industrial sensors, and electronic control equipment.
BPW37 for Visible and NIR Light Sensing
The BPW37 from Light in Motion is a silicon NPN phototransistor designed for the detection of visible and near-infrared radiation. The device features a daylight-blocking filter that improves sensitivity to infrared wavelengths while reducing interference from ambient visible light. It offers a spectral response extending from approximately 450 nm to 1080 nm with peak sensitivity near 850 nm. The phototransistor is suitable for applications requiring reliable infrared detection, including optical switching, object sensing, and monitoring systems. Its compact design and broad wavelength response enable straightforward integration into a variety of optoelectronic assemblies.
With capabilities ranging from focused optical sensing to wide-angle detection and near-infrared monitoring, these phototransistors address a broad range of requirements in industrial automation, instrumentation, proximity sensing, electronic controls, and optical detection systems. Their combination of spectral sensitivity, response speed, and packaging options provides designers with flexible solutions for next-generation sensing applications.
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