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Driving energy efficient innovations, ON Semiconductor is now aiming to improving performance for industrial imaging applications that require both high resolution image capture and maximum image uniformity. The newly released 29 megapixel KAI-29052 image sensor provides up to twice the imaging sensitivity of the existing KAI-29050 in the wavelength range of 500 nanometer (nm) to 1050 nm. This improved performance is particularly beneficial to applications operating in near-infrared (NIR) wavelengths, such as 850 nm.
The enhanced pixel design retains isolation of charge from one photodiode to another, enabling the increase in sensitivity without any reduction to image sharpness (Modulation Transfer Function, or MTF). In addition, an improved amplifier design reduces read noise by 15%, increasing the linear dynamic range available from the device to 66 decibel (dB). With these enhancements, the KAI-29052 serves as a new performance benchmark for high resolution image capture.
The KAI-29052 is available in a RoHS-compliant CPGA-72 package in Monochrome, Bayer Color, and Sparse Color configurations, and is fully pin compatible not only with the existing KAI-29050 image sensor but also a full family of 5.5 micron and 7.4 micron CCD image sensors, enabling camera manufacturers to quickly adopt the new device. Evaluation kits for ON Semiconductor’s full family of Interline Transfer CCD image sensors are also available, allowing the performance of devices such as the KAI-29052 to be examined and reviewed under real-world conditions.
