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Mitsubishi Electric Corporation is set to introduce a new high-power 638 nm wavelength red laser diode (LD) offering an industry-leading 2.5 W output under pulse operation with built-in meniscus lens. By eliminating the need for an external collimator lens, the new red laser diode is expected to lead to simpler optical designs, reduced sizes and lower costs for projectors.

The light sources for projectors, conventional mercury lamps, are being replaced with solid-state light sources that offer higher energy efficiency, a wider range of color expression and longer life. Laser diodes deliver especially high output power, low power consumption due to efficient power-conversion, an unmatched color range due to narrow spectrum, and superior picture quality with high contrast ratio.

Back in September 2015, Mitsubishi Electric released its ML562G84 high-power red laser diode, which achieved 2.5 W output under pulse operation as a red light source in three colors for projectors. However, when the model incorporated in projectors, it is necessary to collimate the laser beam by an external lens or the like and efficiently irradiate the imaging device. The new high power 638-nm red LD with built-in lens allows for the external collimator lens to be eliminated and contributes to simplification of the optical design, miniaturization and cost reduction for projectors.

Key features of the product are:

• Simplified projector design due to built-in meniscus lens - Original built-in meniscus lens collimates the laser beam and reduces spread to about 1/700th, Eliminates the need for an external collimator lens and contributes to simpler optical designs, reduced sizes and lower costs for projectors.
• Industry leading 2.5 W output power under pulse operation - Collimates 98 % or more of the laser beam and achieves an unmatched 2.5 W output under pulse operation, equal to that of conventional products with built-in lenses, High-luminosity with 638 nm laser light and 2.5 W output under pulse operation producing 120 lumens per laser diode, Unmatched operating temperature range of 0 to 45 degrees Celsius at 2.5 W pulse operation due to large 9.0 mm diameter transistor-outline can (TO-CAN) package with excellent heat dissipation.