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GoPhotonics presents a versatile portfolio of advanced photodiodes designed for precise, application-specific light detection across visible and infrared spectral regions. Engineered to support applications ranging from high-speed datacom and telecom links to scientific sensing, infrared alignment, LiDAR, OTDR, quantum measurements, and general research, these photodiodes include InGaAs, GaAs PIN, silicon, and avalanche photodiode types. Key performance attributes include broad or targeted spectral response, high responsivity for efficient optical-to-electrical conversion, fast response times for rapid signal changes, low dark current for accurate low-light detection, low capacitance for minimal signal distortion, high gain where applicable, and noise-optimized architectures for high-sensitivity measurements.
Equipped with features such as AR-coated windows, ball-lens or fiber-coupled packages, compact wafer or TO-style housings, CMOS or avalanche designs, and support for single-channel or array detection, these photodiodes integrate seamlessly into research setups, telecom systems, industrial sensing, LiDAR and ranging instruments, and optical communication networks. With RoHS-compliant and robust packaging options, this lineup provides reliable, high-performance detection for applications spanning fiber optic communication, spectroscopy, medical and chemical sensing, environmental monitoring, quantum photon detection, and high-speed signal acquisition.
55-757 - InGaAs Photodiode for Research Applications
The 55-757 from Edmund Optics is an InGaAs photodiode that operates over a broad spectral range from 900 to 1700 nm, enabling efficient detection across common infrared communication and sensing bands. It uses a small active area design that supports fast response behavior, providing high-speed operation suitable for rapid signal changes. Its responsivity values at 1310 nm and 1550 nm indicate strong conversion efficiency in key telecom wavelengths, while its low capacitance contributes to reduced signal distortion during high-frequency measurements. The device offers low dark current, supporting accurate detection of weak optical signals with minimal noise influence, and its Noise Equivalent Power value reflects high sensitivity in low-light environments. It is provided in an FC receptacle package with a ball-lens configuration, offering straightforward fiber alignment and convenient integration into optical setups. It is ideal for high-speed datacom, telecom links, infrared alignment tasks, medical diagnostic sensing, chemical analysis, and general research applications requiring compact, sensitive IR photodetectors.
EOPD-940-0-15 - Silicon Photodiode for Light Sensing Applications
The EOPD-940-0-15 from EPIGAP OSA Photonics GmbH is a silicon photodiode that operates across a spectral range from 400 to 1100 nm with peak sensitivity at 940 nm, providing strong response in both visible and near-infrared regions. Its responsivity values indicate efficient light-to-signal conversion at shorter wavelengths and significantly higher sensitivity at its peak wavelength. The device features a square active area supporting stable light collection, while its low dark current enables accurate measurements of low optical power. The junction capacitance and response time reflect its ability to handle moderately fast signal changes without excessive signal distortion. Its high shunt resistance contributes to low noise performance. The photodiode is available in a THT TO-5 package, ensuring straightforward integration into standard assemblies and instrumentation. It is ideal for use in medical sensing, industrial light monitoring, and scientific detection systems.
PX01080-TO - InGaAs Avalanche Photodiode for OTDR Applications
The PX01080-TO from Phlux Technology is an InGaAs avalanche photodiode with a spectral response from 950 to 1650 nm, allowing detection across key near-infrared wavelengths used in ranging and sensing. Its gain capability above 100 indicates strong signal amplification, while the low noise factor reflects efficient operation with minimal signal degradation. The temperature coefficient of breakdown voltage suggests stable multiplication behavior under changing thermal conditions. Its AR-coated optical window provides high transmission across much of the device’s operating band, supporting efficient light coupling. The device is supplied in a TO-46 package for straightforward integration into compact optoelectronic assemblies. It is ideal for LiDAR systems, laser range finding, OTDR, free-space optical links, and fiber or optical sensing applications.
Andarta - Single-Photon Avalanche Diode Sensor for Quantum Sensing Applications
The Andarta from Singular Photonics is a SPAD sensor built on CMOS technology that uses a 10.17 μm pixel pitch and offers a full 100% fill factor when used with microlenses, enabling efficient photon collection across its 512 x 512 pixel array and optional 128 x 128 macro-pixel mode. Its clear aperture and short dead time support rapid photon recovery, while the peak detection efficiency at 785 nm highlights strong sensitivity in the near-infrared. The median dark count rate indicates low intrinsic noise, and its gated timing, timing jitter, and fine time resolution enable precise time-correlated photon measurements. The sensor integrates on-chip data compression and a delay generator, and its specified data rates and frame rates reflect its capability to handle both high-throughput burst acquisition and continuous operation. Its DCS modes support fast correlation imaging, and its counting depths indicate compatibility with both high-dynamic-range and burst-optimized acquisition. The device accommodates C or CS mount optics and includes an optional protective window for system flexibility. It connects through USB-C and supports multiple software environments through a universal API. It is ideal for Raman spectroscopy, FLIM, time-resolved multispectral imaging, time-of-flight measurement, quantum sensing, and advanced microscopy applications.
APA1201010000 - GaAs PIN Photodiode for Fiber Optic Communication Applications
The APA1201010000 from Coherent Corp. is a GaAs PIN photodiode designed for operation at a wavelength of 850 nm, suitable for high-speed optical communication. It supports data rates up to 25 Gb/s with a 3 dB bandwidth of 20 GHz, offering fast response for single-channel detection. The photodiode features a 40 μm aperture, providing efficient light collection, and a responsivity of 0.6 A/W, indicating its ability to convert optical signals to electrical signals effectively. Its low dark current and small capacitance contribute to minimal noise and high signal integrity. The device has a topside anode and cathode configuration and comes in a compact wafer package of 220 (L) μm x 250 (W) μm x 150 (H) μm. Halogen-free and RoHS-compliant, this photodiode is ideal for datacom and parallel multimode fiber optical communication applications.
With their broad spectral coverage, high responsivity, and application-focused designs, these photodiodes deliver reliable, high-performance light detection across research, industrial, and communication environments. Engineered for speed, sensitivity, and low-noise operation, they support everything from high-speed fiber optic communication and LiDAR sensing to infrared alignment, spectroscopy, and quantum measurement workflows. Whether enabling accurate low-light detection, fast signal conversion, or precise infrared measurement, these photodiodes provide the performance, versatility, and detection reliability required for next-generation photonic systems and optical instrumentation.
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