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GoPhotonics presents a curated lineup of high-performance Pockels cells engineered for precise electro-optic modulation across industrial, scientific, medical, and defense laser systems. Designed around high-quality nonlinear crystals, low-loss optical assemblies, and nanosecond-level switching response, these devices enable Q-switching, pulse picking, cavity dumping, regenerative amplification, and polarization control from the ultraviolet to the near-infrared. Their rugged packaging and application-optimized configurations ensure reliable operation under high optical power, elevated repetition rates, and challenging environmental conditions - supporting advancements in ultrafast research, precision materials processing, nonlinear optics, and next-generation photonic instrumentation
D-Q12A: Reliable Electro-Optic Control for Solid-State Q-Switching
The D-Q12A Pockels cell from Shandong Laserton Optic is engineered for precise electro-optic Q-switching and rapid polarization modulation in solid-state laser cavities. This DKDP pockels cell is optimized to deliver stable extinction performance, ensuring reliable intracavity polarization control. Its role within Q-switched architectures allows controlled energy storage and release, resulting in consistent high-peak-power pulse generation. Designed for dependable timing and modulation stability, the D-Q12A supports industrial pulsed laser systems and research platforms that require repeatable switching behavior and robust operational consistency.
iRTP-6: Compact High-Speed RTP Pockels Cell for 1064 nm Systems
The iRTP-6 from Raicol Crystals is a compact RTP-based Pockels cell built around a 6 x 6 mm clear aperture and optimized for 1064 nm operation. With a quarter-wave voltage of 3.3 kV at 1064 nm, it operates efficiently within practical high-voltage driver ranges while maintaining effective electro-optic modulation. Transmission above 99% indicates minimal insertion loss, preserving beam energy during switching, while an extinction ratio greater than 27 dB ensures strong polarization contrast for clean Q-switched pulses. Sub-1 ns rise and fall times confirm true nanosecond switching capability, and capacitance below 6 pF supports faster electrical response and simplified driver integration. Its damage threshold exceeding 1 GW/cm² and repetition rate capability up to 350 kHz make it well suited for high peak-power and high-throughput industrial laser applications where both speed and durability are critical.
CS092855: Thermally Compensated RTP Pockels Cell for High-Repetition-Rate Lasers
The CS092855 from Jinan Crystrong Photonics Technology is a Lithium Niobate (LN) Pockels cell in a thermally compensated configuration to ensure stable electro-optic performance across temperature variations. With transmission greater than 99% at 1064 nm, it maintains excellent optical efficiency in pulsed laser systems. An extinction ratio exceeding 30 dB provides strong polarization discrimination, improving pulse contrast in Q-switching and pulse-picking applications. Rise and fall times below 1 ns demonstrate high-speed switching capability, and repetition rate operation above 1 MHz supports advanced high-frequency laser platforms. Available in clear apertures ranging from 5 x 5 mm² up to 15 x 15 mm², the device accommodates varying beam diameters while sustaining laser-induced damage thresholds of up to approximately 1 GW/cm² for nanosecond pulses. These characteristics position it for regenerative amplifiers, high-energy pulsed systems, and precision electro-optic modulation setups.
RTPEOC-15.0*15.0-5.0X-1064: Industrial-Grade RTP Pockels Cell for Robust 1064 nm Modulation
The RTPEOC-15.0*15.0-5.0X-1064 from Cristal Laser is an RTP-based Pockels cell tailored specifically for 1064 nm laser systems. Its non-hygroscopic RTP crystal enhances environmental robustness and long-term stability compared to moisture-sensitive alternatives. Extinction ratios typically above 30 dB across temperature variations ensure consistent polarization control in demanding operating conditions. High-quality anti-reflection coatings, with damage thresholds exceeding 10 J/cm² at 1064 nm (10 ns pulses), provide strong resistance to high-energy laser exposure. Precision alignment and rugged packaging further reinforce its suitability for industrial Q-switching, regenerative amplification, and high-stability electro-optic modulation where repeatability and durability are essential.
EM508-512 Series: KD*P-Based Pockels Cells for High-Energy and Broad Wavelength Applications
The EM508-512 series from Leysop is based on KD*P crystal technology and supports operation across approximately 0.3 µm to 1.2 µm, covering UV through near-infrared laser systems. With half-wave voltages around 6.2 kV (static) and approximately 7.5 kV (dynamic) at 1064 nm, these devices are designed for high-voltage, high-energy pulsed environments. Clear aperture options from 8 mm up to 20 mm accommodate larger beam diameters typical of high-energy laser systems. Optical rise times on the order of 1 ns enable rapid polarization switching, while contrast ratios greater than 1000:1 at around 1060 nm support efficient pulse slicing and intracavity control. Damage thresholds near 600 MW/cm² and the availability of dry or fluid-filled configurations position the series for demanding Q-switching and pulse-picking applications in research-grade and defense-oriented laser platforms requiring both performance and structural robustness.
Pockels cells featured on GoPhotonics utilize non-hygroscopic RTP crystals for stable, high repetition rate operation and KD*P crystals for broad spectral response and high damage thresholds. Nanosecond-scale switching (< 1 ns rise/fall times) and high extinction ratios (> 27 dB to > 30 dB) are common across these high-end devices, enabling performance in Q-switching, pulse picking, and regenerative amplification typical of advanced laser systems.
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