https://cdn.gophotonics.com/news/covvv_639123500999448238.webp712370
Nuvoton Technology Corporation Japan (NTCJ), a global solutions provider, announced the mass production of a "high-power violet laser diode (402 nm, 4.5 W)" that achieves industry-leading-class optical output in a 9.0 mm diameter CAN package (TO-9) in May. This product achieves 1.5 times the optical output compared to NTCJ's conventional product through its proprietary device structure and heat dissipation design technology, and contributes to improving production throughput in optical equipment such as maskless lithography systems. Furthermore, adding this product to NTCJ's lineup enables its product portfolio to support major photosensitive materials used in advanced semiconductor packaging.
The Violet 402 nm laser diodes generally face relatively low wall-plug efficiency (WPE), self-heating, and short wavelength-induced degradation, limiting stable high-power operation. To address these challenges, the "device structure that enhances WPE" and the "high thermal conduction package technology that effectively dissipates heat," used in the high-power ultraviolet laser diode announced in January 2026, were expanded to the violet band. As a result, NTCJ is launching a high-power violet laser diode achieving 1.5 times the optical output of NTCJ's conventional product, with improved lifetime at high-power operation and enhanced heat dissipation, contributing to higher production throughput in industrial optical equipment.
The product delivers significant value in maskless lithography for advanced semiconductor packaging, a rapidly growing market driven by AI demand. Maskless lithography directly exposes wiring patterns from design data, reducing cost and development time while enabling high-precision correction of substrate warpage and distortion. Laser diodes are increasingly required to support wavelengths close to the mercury lamp i-line 365 nm and h-line 405 nm, and higher optical output to improve throughput. Following the 379 nm, 1.0 W high-power ultraviolet laser diode for i-line applications announced in January 2026, NTCJ is adding a 402 nm, 4.5 W high-power violet laser diode for h-line applications, strengthening its maskless lithography light source lineup to support multiple major photosensitive materials and higher throughput.
In addition, this product expands NTCJ's "semiconductor laser-based alternatives to mercury lamps," providing a new h-line light source option for photocuring, 3D printing, sensing, biomedical, and marking. This contributes to improving process efficiency and enabling new optical applications. It is scheduled to be exhibited at NTCJ's booth at "OPIE '26" to be held in Yokohama, Japan, on April 22-24, 2026.
Click here to learn more about Nuvoton’s Semiconductor Laser.
