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GoPhotonics, a global platform for sourcing advanced photonics and optical components, has spotlighted a new range of Electro-Optic Q-switches optimized for use in pulsed solid-state laser, pulse picking, and modulation applications. The devices are designed with high transmission efficiency, low wavefront distortion, and high laser damage thresholds to support integration into demanding laser environments.
7100-4 Lithium Niobate Electro-Optic Q-Switch
The 7100-4 from G&H is a Lithium Niobate electro-optic Q-switch designed for operation at 1064 nm. It provides an extinction ratio above 100:1 along with wavefront distortion of lambda/8 at 633 nm, supporting stable optical performance in pulsed laser systems. The device features a clear aperture of 0.312 cm and parallelism below 10 arcsec for improved beam alignment characteristics.
The EOQS has a Z axis orientation tolerance of ±10 arcmin and X & Y axis orientation tolerance of ±30 arcmin. It also features end surface flatness below lambda/8 and 20-10 scratch-dig surface quality. With a damage threshold of 300 MW/cm2 and chamfer dimensions of 0.01 cm to 0.015 cm at 45 degrees, the Q-switch is packaged in a compact 7.4 mm x 7.4 mm x 21 mm housing.
IMA10a Electro-Optic Q-Switch
WISOPTIC’s IMA10a electro-optic Q-switch features a Ø10 mm clear aperture and is optimized for 1064 nm laser operation. The device offers a voltage contrast ratio above 2000:1 and an intrinsic contrast ratio greater than 5000:1, enabling efficient optical switching performance. It also provides wavefront distortion of lambda/6 at 633 nm and maintains single-pass insertion loss below 2%.
The EOQS delivers single-pass transmission greater than 98.5% and supports a laser damage threshold of 750 MW/cm2. It operates with DC capacitances of 4.5 pF, 5 pF, 5.5 pF, and 8 pF, while the DC quarter wave voltage is rated at 3200 V. Designed for low-repetition-frequency, low-power pulsed solid-state laser applications, the device is available in a Ø25.4 mm x 32 mm package.
SRC-Y-030-10-20-1064 RTP Electro-Optic Q-Switch
The SRC-Y-030-10-20-1064 from Sintec Optronics is a Rubidium Titanyl Phosphate (RTP) electro-optic Q-switch developed for 1064 nm applications. The device offers transmission above 98.5% and a half wave voltage of 0.99 kV. It also features a contrast ratio greater than 20 dB and a minimum acceptance angle of 1 degree.
The EOQS is available with clear apertures ranging from 2 mm x 2 mm to 15 mm x 15 mm, enabling flexibility for different optical system configurations. It incorporates an anti-reflective coating with reflectivity of 0.2% at 1064 nm and supports a laser damage threshold above 600 MW/cm2. The Q-switch is housed in a 3 mm x 3 mm x 10 mm package and is suitable for Q-switching, amplitude modulation, phase modulation, and pulse picker applications.
7100-11A Lithium Niobate Electro-Optic Q-Switch
The 7100-11A from G&H is a Lithium Niobate electro-optic Q-switch designed for 1064 nm laser systems. Similar to the 7100-4 model, it provides an extinction ratio above 100:1 and wavefront distortion of lambda/8 at 633 nm. The device has a clear aperture of 0.312 cm and parallelism below 10 arcsec to support beam quality and alignment stability.
The EOQS includes Z axis orientation tolerance of ±10 arcmin and X & Y axis orientation tolerance of ±30 arcmin. It also features end surface flatness below lambda/8 and 20-10 scratch-dig surface quality. With a damage threshold of 300 MW/cm2, the Q-switch is supplied in a module measuring 9 mm x 9 mm x 25 mm.
IMA8b Electro-Optic Q-Switch
WISOPTIC’s IMA8b electro-optic Q-switch is designed with a Ø8 mm clear aperture for 1064 nm laser applications. The device offers a voltage contrast ratio above 2000:1 and an intrinsic contrast ratio greater than 5000:1. It also maintains wavefront distortion of lambda/6 at 633 nm and single-pass insertion loss below 2%.
The EOQS provides transmission greater than 98.5% and supports a laser damage threshold of 750 MW/cm2. It operates with DC capacitances of 4.5 pF, 5 pF, 5.5 pF, and 8 pF, along with a DC quarter wave voltage of 3200 V. Intended for low-repetition-frequency, low-power pulsed solid-state laser applications, the Q-switch is packaged in a compact Ø19 mm x 24.7 mm housing.
With configurations supporting high contrast ratios, low insertion loss, high transmission efficiency, and robust laser damage thresholds, these electro-optic Q-switches provide suitable options for a wide range of 1064 nm pulsed laser and modulation applications. Their compact form factors and optical performance characteristics support integration into advanced solid-state laser systems requiring reliable pulse control and switching functionality.
Click here to learn more about electro-optic q-switches.
