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S11866-128-02

Photodetector by Hamamatsu Photonics
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The S11866-128-02 from Hamamatsu Photonics is a Photodetector with Wavelength Range 200 to 1000 nm, Supply Voltage 4.75 to 5.25 V, Rise Time 0 to 30 ns, Capacitance 0.5 to 1 pF. More details for S11866-128-02 can be seen below.

Product Specifications

Product Details

  • Part Number
    S11866-128-02
  • Manufacturer
    Hamamatsu Photonics
  • Description
    200 to 1000 nm Chip Photovoltaic Photodetector

General Parameters

  • Photodetector Material
    Silicon (Si)
  • Operation Mode
    Photovoltaic
  • Package Type
    Chip
  • Spectral Band
    Ultraviolet, Visible, Near-IR
  • Wavelength Range
    200 to 1000 nm
  • Active Area
    0.7 x 0.8 mm2 (W x H)
  • Supply Voltage
    4.75 to 5.25 V
  • Rise Time
    0 to 30 ns
  • Configuration
    Array
  • Voltage Responsivity
    1760 to 4400 V/lx.s
  • Fall Time
    0 to 30 ns
  • Impedance
    3 kOhms
  • Output Voltage
    3 to 3.5 V (Saturation)
  • Package
    Chip
  • Rise Fall Time
    0 to 30 ns
  • Window Material
    Glass epoxy
  • Capacitance
    0.5 to 1 pF
  • Note
    Current consumption: 16 to 30 mA, Element pitch: 0.8 mm

Environmental Conditions

  • Operating Temperature
    -5 to 60 Degree C
  • Storage Temperature
    -10 to 70 Degree C

Physical Properties

  • Dimensions
    46 x 56 x 5.2 mm

Applications

  • Application
    Long and narrow line sensors, Line sensors for X-ray detection

Technical Documents
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