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S13885-128

Photodetector by Hamamatsu Photonics
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The S13885-128 from Hamamatsu Photonics is a Photodetector with Wavelength Range 200 to 1000 nm, Supply Voltage 3 to 3.6 V, Rise Time 0 to 30 ns, Capacitance 0.125 to 0.25 pF. More details for S13885-128 can be seen below.

Product Specifications

Product Details

  • Part Number
    S13885-128
  • Manufacturer
    Hamamatsu Photonics
  • Description
    200 to 1000 nm Chip Photovoltaic Photodetector

General Parameters

  • Photodetector Material
    Silicon (Si)
  • Operation Mode
    Photovoltaic
  • Package Type
    Chip
  • Spectral Band
    Ultraviolet, Visible, Near-IR
  • Wavelength Range
    200 to 1000 nm
  • Active Area
    0.3 x 0.6 mm2 (W x H)
  • Supply Voltage
    3 to 3.6 V
  • Rise Time
    0 to 30 ns
  • Configuration
    Array
  • Voltage Responsivity
    2400 to 6000 V/lx.s
  • Fall Time
    0 to 30 ns
  • Impedance
    3 kOhms
  • Measurable Energy
    30 to 100 keV
  • Output Voltage
    0.7 to 1 V (Saturation)
  • Package
    Chip
  • Rise Fall Time
    0 to 30 ns
  • Window Material
    Glass epoxy
  • Capacitance
    0.125 to 0.25 pF
  • Note
    Current consumption: 36 to 72 mA, Element pitch: 0.4 mm

Environmental Conditions

  • Operating Temperature
    -5 to 60 Degree C
  • Storage Temperature
    -10 to 70 Degree C

Applications

  • Application
    Line sensors for X-ray detection, Long and narrow line sensors

Technical Documents
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