QD50-0

Photodetector by OSI Optoelectronics

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The QD50-0 from OSI Optoelectronics is a Photodetector that has a responsivity of 0.47 A/W - 0.54 A/W (at 900 nm). It has an active area of 50 mm2 and active area diameter of 8 mm. This photodetector has a dark current of 15 nA - 30 nA and element gap of 0.2 mm. It has a rise time of 10 ns (at 900 nm) and noise-equivalent power (NEP) of 1.3 x 10-13 W/rt(Hz). This photodetector features a quadrant photodiode array with integrated circuitry that generates two differential signals and one sum signal.

The QD50-0 has a noise of 15 nV/√Hz and frequency response (-3 dB) of 120 kHz & 250 kHz. It has a capacitance of 125 pF and maximum reverse voltage of 30 V. This photodetector has a slew rate below 10 V/μs and an output current limit of 25 mA. It requires a DC supply voltage of 15 V and is available in a TO-8 package. This photodetector is ideal for position measurement, beam centering, targeting, and guidance system applications.

Product Specifications

Product Details

  • Part Number
    QD50-0
  • Manufacturer
    OSI Optoelectronics
  • Description
    Photodetector for Targeting & Guidance Applications

General Parameters

  • Photodetector Material
    Silicon (Si)
  • Operation Mode
    Photoconductive
  • Package Type
    TO-Can
  • Spectral Band
    Near-IR
  • Wavelength Range
    900 nm
  • Active Area
    50 x 50 mm2
  • Rise Time
    10 ns
  • Channels
    Quad
  • Configuration
    Array
  • Active Area Diameter
    8 mm
  • Noise equivalent power(NEP)
    1.3 x 10-13 W/vHz
  • Package
    TO-8
  • Rise Fall Time
    10 ns (Rise)
  • RoHS
    Yes
  • Reverse Voltage
    30 V
  • Capacitance
    125 pF
  • Dark Current
    15 to 30 nA
  • Responsivity/Photosensitivity
    0.47 to 0.54 A/W

Environmental Conditions

  • Operating Temperature
    -40 to 100 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Applications

  • Application
    Position Measuring, Beam Centering, Targeting, Guidance Systems

Technical Documents

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