QD50-0

Photodetector by OSI Optoelectronics

Note: Your Quotation Request will be directed to OSI Optoelectronics.

The QD50-0 from OSI Optoelectronics is a Photodetector with Wavelength Range 900 nm, Rise Time 10 ns, Active Area Diameter 8 mm, Capacitance 125 pF, Dark Current 15 to 30 nA. More details for QD50-0 can be seen below.

Product Specifications

Product Details

  • Part Number
    QD50-0
  • Manufacturer
    OSI Optoelectronics
  • Description
    900 nm Near-IR Through-Hole Silicon Photodetector

General Parameters

  • Photodetector Material
    Silicon (Si)
  • Operation Mode
    Photoconductive
  • Package Type
    TO-Can
  • Spectral Band
    Near-IR
  • Wavelength Range
    900 nm
  • Active Area
    50 x 50 mm2
  • Rise Time
    10 ns
  • Channels
    Quad
  • Configuration
    Array
  • Active Area Diameter
    8 mm
  • Noise equivalent power(NEP)
    1.3 x 10-13 W/vHz
  • Package
    TO-8
  • Rise Fall Time
    10 ns (Rise)
  • RoHS
    Yes
  • Reverse Voltage
    30 V
  • Capacitance
    125 pF
  • Dark Current
    15 to 30 nA
  • Responsivity/Photosensitivity
    0.47 to 0.54 A/W

Environmental Conditions

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Applications

  • Application
    Position Measuring, Beam Centering, Targeting, Guidance Systems

Technical Documents

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