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OP506C

Phototransistor by TT Electronics
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The OP506C from TT Electronics is a Phototransistor with Collector Emitter Voltage (Breakdown) 30 V, Collector-Dark Current 100 nA, Collector Emitter Voltage(Saturation) 0.40 V, Emitter Collector Voltage(Breakdown) 5 V, On-State Collector Current 1.1 to 3 mA. More details for OP506C can be seen below.

Product Specifications

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Product Details

  • Part Number
    OP506C
  • Manufacturer
    TT Electronics

Applications

  • Application
    Space-limited applicatons, Interruptve applicaOons to detect media which is semitransparent to infrared light

General Parameters

  • Collector Current
    30 mA
  • Input Power(Irradiance) :
    1 mW/cm2
  • Material
    Silicon
  • Mounting Type
    Through-Hole
  • Package
    T-1 0.100"
  • Phototransistor Type
    Photo Transistor
  • Polarity
    NPN
  • RoHs
    Yes
  • Technology
    GaAs, GaAIAs
  • Viewing Angle
    60 Degree
  • Collector Emitter Voltage (Breakdown)
    30 V
  • Collector-Dark Current
    100 nA
  • Collector Emitter Voltage(Saturation)
    0.40 V
  • Emitter Collector Voltage(Breakdown)
    5 V
  • On-State Collector Current
    1.1 to 3 mA
  • Power Dissipation :
    100 mW
  • Wavelength(Spectral Sensitivity)
    935 nm

Temperature

  • Lead Soldering Temperature
    260 Degree C
  • Operating Temperature
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents
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