Photodiodes from Manufacturers in United States - Page 17
1,178 Photodiodes from 26 Manufacturers meet your specification.
1,178 Photodiodes
from
26 Manufacturers
1,178 Products
from
26 Manufacturers
350 to 1100 nm PIN Photodiodes with DIP / DIL / Thru-Hole Package
Thermoelectrically Cooled InGaAs Photodiodes
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.75 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
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Silicon Avalanche Photodiode 905 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
Surface Mount
more info
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AT2 Series - Two Stage Cooled PbS Packaged IR Detectors
Si Photodiode, 1 ns Rise Time, 200 - 1100 nm, Ø1 mm Active Area
400 ns Rise Time, 320 - 1100 nm, 1.1 mm x 1.1 mm Active Area Si Photodiode
Blue Enhanced Response, 5.1mm2, Silicon Detector
Silicon PIN Photodiode from 610 to 1080 nm
Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 1 nA
Responsivity/Photosensitivity:
0.57 A/W
more info
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Capacitance:
1.8 to 2.2 pF
Responsivity/Photosensitivity:
0.85 to 1.05 A/W
more info
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200 to 380 nm SiC UV Photodiode with TO-46 Package
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
200 to 380 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 1 nA
Responsivity/Photosensitivity:
0.13 A/W
more info
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970 nm Surface Mount Photodiodes with 12 to 65 pF Capacitance
800 to 2600 nm InGaAs PIN Photodiodes with 150 nA to 350 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
150 nA to 350 µA
Capacitance:
100 to 1500 pF
Responsivity/Photosensitivity:
1.24 A/W
more info
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InGaAs PIN Photodiode Chip, Active Area 500um
Thermoelectrically Cooled Extended InGaAs Photodiodes
Silicon PIN Photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.2 nA
Responsivity/Photosensitivity:
0.47 A/W
Package Type:
Through-Hole
more info
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1 mm2 Photodiode in TO-18 Pkg
241 - 255 of 1178 Photodiodes
Photodiode companies
Responsivity/Photosensitivity (A/W)
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