Photodiodes from Manufacturers in United States - Page 22
1,178 Photodiodes from 26 Manufacturers meet your specification.
1,178 Photodiodes
from
26 Manufacturers
1,178 Products
from
26 Manufacturers
Si Photodiode, 65 ns Rise Time, 350 - 1100 nm, 10 mm x 10 mm Active Area
UV Enhanced Response, 15mm2, Silicon Detector
Silicon PIN Photodiode from 430 to 1100 nm
Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1.2 nA
Responsivity/Photosensitivity:
0.57 A/W
more info
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InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
more info
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200 to 380 nm SiC Photodiode with 0.13 A/W Responsitvity
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
200 to 380 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 1 nA
Responsivity/Photosensitivity:
0.13 A/W
more info
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InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
more info
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800 to 2600 nm InGaAs PIN Photodiodes with 850 nA to 830 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
850 nA to 830 µA
Capacitance:
450 to 3000 pF
Responsivity/Photosensitivity:
1.24 A/W
more info
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InGaAs PIN Photodiode Chip on Ceramic, Active Area 300um
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Responsivity/Photosensitivity:
0.88 to 0.98 A/W
Package Type:
Chip on Ceramic
more info
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Thermoelectrically Cooled InGaAs Photodiodes
InGaAs PIN Photodiode from 800 to 1700 nm
EUV & UV Detectors (SXUV & UVG Family)
InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area, FC/PC Bulkhead
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
1.003 A/W
Package Type:
Through-Hole, Connectorized
more info
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UV Enhanced Response, 0.8mm2, Silicon Detector
Silicon PIN Photodiode from 350 to 1070 nm
Photodiode Material:
Silicon
Wavelength Range:
350 to 1070 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 5 nA
Capacitance:
1.7 to 3.8 pF
Package Type:
Surface Mount
more info
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GaAs PIN photodiode from 770 to 860 nm
316 - 330 of 1178 Photodiodes
Photodiode companies
Responsivity/Photosensitivity (A/W)
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