Photodiodes from Manufacturers in United States - Page 23

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 23 of 79
InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area, FC/PC Bulkhead

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
1.003 A/W
Package Type:
Through-Hole, Connectorized
Configuration:
Single
Channels:
Single
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
30 µA
Capacitance:
8000 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
240 to 320 nm GaN UV Photodiode with Surface Mount Package

Product Specs

Photodiode Material:
Gallium Arsenide (GaAs)
Wavelength Range:
240 to 320 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 to 1 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.11 A/W
Package Type:
Surface Mount
Module:
No
more info
InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
more info
InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
more info
800 to 2600 nm InGaAs PIN Photodiodes with 15 nA to 86 µA Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
15 nA to 86 µA
Capacitance:
15 to 165 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
DIP / DIL / Thru-Hole
Module:
No
more info
InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 500um

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 3 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Thermoelectrically Cooled InGaAs Photodiodes

Product Specs

Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
1.2 to 6 nA
Capacitance:
3500 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon photodiode from 400 to 1100 nm

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
<2 to 5 nA
Capacitance:
<30 pF
Responsivity/Photosensitivity:
0.70 A/W
Package Type:
Chip
Configuration:
Array
Module:
No
more info
Electron & Photon Detectors (AXUV Family) X-Ray and Radiation

Product Specs

Wavelength Range:
0.01 to 190 nm
Operation Mode:
Photoconductive
Capacitance:
1.5 nF
Responsivity/Photosensitivity:
0.07 to 0.09 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Si Photodiode, 47 ps Rise Time, 400 - 1100 nm, Ø0.25 mm Active Area, FC/PC Bulkhead

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
35 pA
Capacitance:
0.94 pF
Responsivity/Photosensitivity:
0.48 A/W
Package Type:
Through-Hole, Connectorized
Configuration:
Single
Channels:
Single
Module:
No
more info
Blue Enhanced Response, 100.0mm2, Silicon Detector

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
410 nm
Operation Mode:
Photovoltaic
Capacitance:
8800 pF
Responsivity/Photosensitivity:
0.2 A/W
Package Type:
Connectorized
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 780 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
InGaAs PIN photodiode from 1260 to 1620 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1620 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photovoltaic
Dark Current:
3 µA
Capacitance:
13000 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
0.5 mm Diameter Active Area InGaAs Photodiode

Product Specs

Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
700 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.6 to 2 nA
Capacitance:
28 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
more info
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