Photodiodes from Manufacturers in United States - Page 30

1,178 Photodiodes from 26 Manufacturers meet your specification.
Selected Filters:
1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 30 of 79
InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
1.003 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
220 to 358 nm UV Detectors with 0.1 to 10 pA Dark Current

Product Specs

Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
220 to 358 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 pA
Capacitance:
15 pF
Responsivity/Photosensitivity:
0.013 to 0.13 A/W
Package Type:
TO-Can
Module:
No
more info
Silicon photodiode from 400 to 1100 nm

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
25 nA
Capacitance:
0.18 to 0.30 nF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Through-Hole
Configuration:
Single
Module:
No
more info
BXF Series - Uncooled PbSe Flat Plate IR Detectors

Product Specs

Photodiode Material:
Pbse
Wavelength Range:
3.6 to 3.8 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Multi Channel X-Ray Detectors and Photoconductive Arrays

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 nA
Capacitance:
12 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
DIP
Configuration:
Array
Channels:
Single
Module:
No
more info
InGaAs Photodiode, 2.5 ns Rise Time, 800-1700 nm, Ø0.5 mm Active Area

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
6 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 350 to 1120 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1120 nm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 3 nA
Capacitance:
1.2 to 3.3 pF
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Silicon PIN photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.12 to 1.5 nA
Capacitance:
80 to 500 pF
Responsivity/Photosensitivity:
0.10 to 0.55 mA/mW
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
4 to 15 nA
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
more info
42.7 mm Photovoltaic Solderable Silicon Photodiode with Die Package

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
50 to 100 nA
Capacitance:
5500 pF
Responsivity/Photosensitivity:
0.69 A/W
Package Type:
Die
Module:
No
more info
Nd-YAG Optimized Photodiodes

Product Specs

Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
35 to 250 nA
Capacitance:
1 to 5 pF
Responsivity/Photosensitivity:
0.40 A/W
Package Type:
Through-Hole, DIP, DIL
Channels:
Quad
Module:
No
more info
600 to 1750 nm InGaAs PIN Photodiodes with 0.12 to 75 nA Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.12 to 75 nA
Capacitance:
55 to 75 pF
Responsivity/Photosensitivity:
0.74 A/W
Package Type:
TO-Can
Module:
No
more info
Silicon photodiode from 400 to 1150 nm

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
18 nA
Capacitance:
24 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
5 mm2 Photodiode in TO-5 Hermetic Pkg

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
450 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 3 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.20 to 0.28 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
InGaAs Photodiode, 10 ns Rise Time, 900-1700 nm, Ø1 mm Active Area

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
1.1 nA
Capacitance:
80 pF
Responsivity/Photosensitivity:
1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 870 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
870 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
1550 nm InGaAs PIN photodiode

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.7 to 0.9 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
Chip, Die
Module:
No
more info
436 - 450 of 1178 Photodiodes
Advertisement
Photodiode companies

Photodetector Type

Manufacturers

Photodiode Material

Package Type

Operation Mode

Wavelength Range (nm)

Capacitance (pF)

Responsivity/Photosensitivity (A/W)

Dark Current (nA)

Channels

Configuration

Tags

Country