Photodiodes from Manufacturers in United States - Page 30
1,178 Photodiodes from 26 Manufacturers meet your specification.
1,178 Photodiodes
from
26 Manufacturers
1,178 Products
from
26 Manufacturers
InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area
220 to 358 nm UV Detectors with 0.1 to 10 pA Dark Current
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
220 to 358 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 pA
Responsivity/Photosensitivity:
0.013 to 0.13 A/W
more info
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Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
0.18 to 0.30 nF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Through-Hole
more info
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BXF Series - Uncooled PbSe Flat Plate IR Detectors
Multi Channel X-Ray Detectors and Photoconductive Arrays
InGaAs Photodiode, 2.5 ns Rise Time, 800-1700 nm, Ø0.5 mm Active Area
Silicon PIN Photodiode from 350 to 1120 nm
Silicon PIN photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.12 to 1.5 nA
Capacitance:
80 to 500 pF
Responsivity/Photosensitivity:
0.10 to 0.55 mA/mW
more info
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
more info
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42.7 mm Photovoltaic Solderable Silicon Photodiode with Die Package
Nd-YAG Optimized Photodiodes
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
35 to 250 nA
Responsivity/Photosensitivity:
0.40 A/W
Package Type:
Through-Hole, DIP, DIL
more info
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600 to 1750 nm InGaAs PIN Photodiodes with 0.12 to 75 nA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
0.12 to 75 nA
Responsivity/Photosensitivity:
0.74 A/W
more info
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Silicon photodiode from 400 to 1150 nm
5 mm2 Photodiode in TO-5 Hermetic Pkg
InGaAs Photodiode, 10 ns Rise Time, 900-1700 nm, Ø1 mm Active Area
Silicon PIN Photodiode from 870 to 1050 nm
1550 nm InGaAs PIN photodiode
Photodiode Material:
InGaAs
Wavelength Range:
1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.7 to 0.9 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
more info
Similar products from this company
436 - 450 of 1178 Photodiodes
Photodiode companies
Responsivity/Photosensitivity (A/W)
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