Photodiodes from Manufacturers in United States - Page 31

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
Page 31 of 79
Large Active Area InGaAs Quadrants

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 100 nA
Capacitance:
225 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
8 to 25 nA
Capacitance:
1.8 to 2.2 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single)
Module:
No
more info
1.05 mm Active Area Photconductive Silicon Photodiode with Die Package

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
950 nm
Operation Mode:
Photoconductive
Dark Current:
7 nA
Capacitance:
250 pF
Responsivity/Photosensitivity:
0.7 A/W
Package Type:
Die
Module:
No
more info
High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.06 to 0.1 nA
Capacitance:
1.8 pF
Responsivity/Photosensitivity:
0.45 to 0.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Si Photodiode, 47 ps Rise Time, 400 - 1100 nm, Ø0.25 mm Active Area

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
35 pA
Capacitance:
0.94 pF
Responsivity/Photosensitivity:
0.48 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
250 to 2600 nm InGaAs PIN Photodiodes with 10 nA to 100 µA Current

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs), Silicon (Si)
Wavelength Range:
250 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA to 100 µA
Capacitance:
6 to 3100 pF
Responsivity/Photosensitivity:
0.22 to 1.24 A/W
Package Type:
TO-Can
Module:
No
more info
Silicon Avalanche Photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 100 nA
Capacitance:
2 to 4 pF
Responsivity/Photosensitivity:
4 to 75 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
EUV & UV Detectors (SXUV & UVG Family)

Product Specs

Wavelength Range:
1 to 400 nm
Operation Mode:
Photoconductive
Capacitance:
40 nF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Calibrated Ge Photodiode, 800 - 1800 nm, Ø3.0 mm Active Area

Product Specs

Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1 to 4 uA
Capacitance:
3250 to 4000 pF
Responsivity/Photosensitivity:
0.88 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 430 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Leaded
Configuration:
Single
Module:
No
more info
Silicon PIN photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 1 nA
Capacitance:
40 to 200 pF
Responsivity/Photosensitivity:
0.1 to 0.67 mA/mW
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
4 to 15 nA
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
231.6 mm Active Area Photovoltaic Silicon Photodiode with Die Package

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
950 nm
Operation Mode:
Photovoltaic
Dark Current:
200 nA
Capacitance:
28000 pF
Responsivity/Photosensitivity:
0.69 A/W
Package Type:
Die
Module:
No
more info
Solderable Chip Series Planar Diffused Silicon Photodiodes

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
100 nA
Capacitance:
95 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Chip
Channels:
Single
Module:
No
more info
250 to 1100 nm Silicon Photodetectors with 0.05 to 0.5 nA Dark Current

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
20 to 80 pF
Responsivity/Photosensitivity:
0.22 to 0.4 A/W
Package Type:
TO-Can
Module:
No
more info
Silicon PIN Photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
25 to 350 nA
Capacitance:
25 to 45 pF
Responsivity/Photosensitivity:
0.1 to 0.20 A/W
Package Type:
TO-Can
Configuration:
Single
more info
AT2 Series - Two Stage Cooled PbS Packaged IR Detectors

Product Specs

Photodiode Material:
Pbs
Wavelength Range:
2.6 to 2.7 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
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