Photodiodes from Manufacturers in United States - Page 42

1,178 Photodiodes from 26 Manufacturers meet your specification.
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1,178 Photodiodes from 26 Manufacturers
1,178 Products from 26 Manufacturers
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Photovoltaic Devices

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photovoltaic
Capacitance:
2000 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
42 mm2 Photodiode in TO-8 Hermetic Pkg

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
632 nm
Operation Mode:
Photoconductive
Dark Current:
11 to 25 nA
Capacitance:
85 pF
Responsivity/Photosensitivity:
0.35 to 0.40 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 350 to 1100 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
20 to 50 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Silicon Avalanche photodiode from 400 to 1100 nm

Product Specs

Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1.2 nA
Capacitance:
1.5 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs, Germanium
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
40 µA
Capacitance:
3000 pF
Responsivity/Photosensitivity:
0.20 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
1100 to 1700 nm InGaAs Quadrant Segmented Photodiodes with Surface Mount Package

Product Specs

Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 10 nA
Capacitance:
125 pF
Responsivity/Photosensitivity:
1 A/W
Package Type:
Surface Mount
Channels:
Quad
Module:
No
more info
Blue Enhanced Photodiodes

Product Specs

Photodiode Material:
Silicon
Wavelength Range:
436 nm
Operation Mode:
Photovoltaic
Dark Current:
10 nA
Capacitance:
390 pF
Responsivity/Photosensitivity:
0.18 to 0.21 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
850 to 1060 nm Silicon Photodetectors with 10 nA Dark Current

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
850 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
6 to 12 pF
Responsivity/Photosensitivity:
0.44 A/W
Package Type:
Leaded
Module:
No
more info
InGaAs PIN Photodiode from 1300 to 1500 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1300 to 1500 nm
Operation Mode:
Photoconductive
Dark Current:
<1 to 2 nA
Capacitance:
0.45 to 1 pF
Responsivity/Photosensitivity:
0.65 to 0.90 A/W
Package Type:
TO-Can Pigtail, Ceramic
Configuration:
Single
Module:
No
more info
AT2 Series - Two Stage Cooled PbS Packaged IR Detectors

Product Specs

Photodiode Material:
Pbse
Wavelength Range:
4.1 to 4.3 µm
Operation Mode:
Photovoltaic
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
No
more info
Silicon PIN Photodiode from 750 to 1050 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
750 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
GaAs PIN photodiode from 770 to 860 nm

Product Specs

Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
770 to 860 nm
Operation Mode:
Photovoltaic
Package Type:
Connectorized
Module:
No
more info

Product Specs

Photodiode Material:
InGaAs
Wavelength Range:
850 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
1 to 1.2 pF
Responsivity/Photosensitivity:
0.10 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
92.1 mm Solderable Chip Silicon Photodiode with Wire

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.7 µA
Capacitance:
2 nF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
Chip, Die
Module:
No
more info
1000 nm Nd-YAG Silicon Photodiode for Laser Positioning Applications

Product Specs

Photodetector Type:
PIN
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
75 to 1000 nA
Capacitance:
25 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
400 to 1100 nm Silicon Photodetectors with 10 nA Dark Current

Product Specs

Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
50 pF
Package Type:
Leaded
Module:
No
more info
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