Photodiodes from Manufacturers in United States - Page 51
1,178 Photodiodes from 26 Manufacturers meet your specification.
1,178 Photodiodes
from
26 Manufacturers
1,178 Products
from
26 Manufacturers
Silicon Avalanche Photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
1.5 to 1.8 pF
Responsivity/Photosensitivity:
117 to 135 A/W
more info
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Silicon PIN Photodiode from 790 to 1050 nm
Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.2 to 20 nA
Responsivity/Photosensitivity:
0.37 to 0.65 A/W
more info
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
30 to 250 nA
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
more info
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158 mm Active Area Solderable Silicon Photodiode
Back Illuminated InGaAs Photodiode / Arrays
800 to 2600 nm InGaAs PIN Photodiodes with 80 nA to 770 µA Current
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photoconductive
Dark Current:
80 nA to 770 µA
Capacitance:
500 to 3100 pF
Responsivity/Photosensitivity:
1.24 A/W
Package Type:
Surface Mount
more info
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Silicon Avalanche Photodiode 900 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
55 to 60 A/W
Package Type:
Surface Mount
more info
Similar products from this company
Silicon PIN Photodiode from 750 to 1050 nm
Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1.2 to 20 nA
Responsivity/Photosensitivity:
0.37 to 0.65 A/W
more info
Similar products from this company
900 to 1700 nm InGaAs Photodiode with 100 µm Diameter
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
more info
Similar products from this company
400 to 1060 nm Silicon Photodetectors with 10 nA Dark Current
Silicon Avalanche Photodiode from 400 to 1100 nm
751 - 765 of 1178 Photodiodes
Photodiode companies
Responsivity/Photosensitivity (A/W)
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