350 W high-brightness multi-emitter semiconductor laser module emitting at 976 nm
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350 W high-brightness multi-emitter semiconductor laser module emitting at 976 nm
- Author:
R. Paoletti. S. Codato, C. Coriasso, F. Gaziano, P. Gotta, A. Maina, P. De Melchiorre, G. Meneghini, G. Morello, G. Pippione, E. Riva, M. Rosso, A. Stano, P. Sanna, M. Gattiglio
High-power multi-emitter laser diodes modules are key components as pump source for low-cost multi-kW Yb-doped fiber laser modules, since diodes worth usually more than 50 % of the overall laser cost. Moreover, pumping at 976 nm Yb absorption peak will enable high conversion efficiency, contributing to a further cost reduction
