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Wavelength-stabilized DBR high-power diode laser

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Wavelength-stabilized DBR high-power diode laser

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  • Author: R Paoletti, C Coriasso, G Meneghini, F Gaziano, P Gotta, S Codato, A Maina, G Morello, P De Melchiorre, G Pippione, E Riva, M Rosso, A Stano and M Gattiglio
This paper reports a wavelength-stabilized high-power diode laser emitting up to 14 W CW in the 9xx nm range. Wavelength stabilization is achieved by a distributed Bragg reflector(DBR) monolithically integrated in the diode laser chip. Key features are identical layer epitaxy (ILE) and the use of a multiple-order electron beam lithography (EBL) optical confining grating. ILE avoids any regrowth or complex technology processes, while EBL multiple-order grating allows narrow-band back reflection and effective lateral optical confinement, and makes it possible to stabilize multiple wavelengths on the same wafer using a manufacturable and reliable technology.

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