Laser Processing of Micro-LED
Micro-LEDs based on inorganic III-V semiconductors (such as GaN) hold great promise for displays that outperform existing technology in terms of efficiency, brightness, pixel density, lifetime and operating range. r lasers have excellent potential for emerging laser applications in the μLED space. Their unique characteristics such as short UV wavelength, and short pulse length, combined with high energy and power, are well suited for the III-V material systems commonly used in LED manufacturing. The 248 nm excimer in particular far exceeds the performance of 266 nm or 213 nm solid-state lasers. Given this, the excimer enables significantly differentiated process strategies that are highly productive, and therefore cost effective.
