Atomic layer deposition (ALD) utilizes a technique that collects a variety of thin film materials resulting from a vapor phase. A very thin film of atomic layers accumulates in multiple deposition cycles The ALD process is performed in a sealed reactor. During ALD’s initial process, gas floods its chamber, resulting in absorption of the precursor molecules onto substrate surfaces. The chamber purges the first processing gas leaving behind only those molecules adsorbed in the wafer surface. A second batch of gas cascades into the same chamber to react with the absorbed molecules to form a molecular layer of compound materials on the water surface. Once the first precursor molecules are consumed, the chemical reaction self-terminates; in addition, a purging mechanism removes the second batch of processing gas and byproducts of the chemical reaction from the chamber.