High-Power and High-Linearity Photodetector Modules for Microwave Photonic Applications
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High-Power and High-Linearity Photodetector Modules for Microwave Photonic Applications
- Author:
Efthymios Rouvalis, Frederick N. Baynes, Xiaojun Xie, Kejia Li, Qiugui Zhou, Franklyn Quinlan, Tara M. Fortier, Scott A. Diddams, Andreas G. Steffan, Andreas Beling, Joe C. Campbell
In these systems the photodiode (PD) must be able to deliver very high photocurrent level and, thus, high RF output power, to improve link gain and SNR, while maintaining high linearity. Several photodiode structures including the uni-traveling carrier (UTC) PD, the partially-depleted-absorber PD, and the modified UTC (MUTC) PD have been developed to alleviate the space-charge screening effect that limits the high-power capability. Through uniform absorber illumination, and the use of substrates with high thermal conductivity RF output power levels have been further improved. Although significant previous work on high-power photodetector chip technology has been published, only a limited number of module demonstrations have been reported so far.
