High-Power and High-Linearity Photodetector Module Based on a Modified Uni-Traveling Carrier Photodiode
Download Whitepaper
High-Power and High-Linearity Photodetector Module Based on a Modified Uni-Traveling Carrier Photodiode
- Author:
Efthymios Rouvalis, Qiugui Zhou, Andreas Beling, Allen S. Cross, Andreas G. Steffan, Joe C. Campbell
These photodiodes have demonstrated excellent performance with very high saturation photocurrents and record RF output power levels. However, at high photocurrents thermal failure issues need to be addressed as well. Flip-chipped MUTC-PDs on AIN substrates have been shown to operate at extremely high photocurrents. High performance analog photonic links require photodiodes with a high output RF power, a high responsivity and a high linearity. The output RF power of InGaAs/InP p-i-n PDs operating at a wavelength of 1.55 is typically limited by space-charge effects in the depletion region. The Uni-Traveling Carrier Photodiode (UTC-PD) has been a successful alternative photodetector technology with high bandwidth and high linearity. In UTC-PDs absorption and carrier collection take place in two separate layers.
