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Silicon Photodiode Device with 100% External Quantum Efficiency

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Silicon Photodiode Device with 100% External Quantum Efficiency

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  • Author: Edward F. Zalewski, C. Richard Duda
A technique for predicting the external quantum efficiency of a silicon photodiode in the 380-390 nm spectral region was developed recently and demonstrated to be very accurate and quite simple compared with conventional thermal radiometric techniques. For the photodiodes used in the Photon-to-Eelectron conversion process are the loss of photons due to relection at the front surface and the loss of photon due to recombination.

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