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Stable High Quantum Efficiency, UV-Enhanced Silicon Photodiodes by Arsenic Diffusion

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Stable High Quantum Efficiency, UV-Enhanced Silicon Photodiodes by Arsenic Diffusion

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  • Author: Raj Korde, Jon Geist
Very high quantum efficiency, UV-echanced silicon photodiodes have been developed by arensic diffusion into p-type silicon as a alternative to the inversion layer photodiode commonly used in precise radiometric and spectroscopic measurements. The fabricated diodes had an unbiased internal quantum efficiency that was 100% from 350 to 550 nm, and that exceeded 100% at shorter wavelengths.

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