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Stability and Quantum Efficiency Performance of Silicon Photodiode Detectors in the far Ultraviolet

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Stability and Quantum Efficiency Performance of Silicon Photodiode Detectors in the far Ultraviolet

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  • Author: L. R. Canfield, Jonathan Kerner, Raj Korde
Silicon photodiodefabrication technology have resulted in the production of photodiodee which are stable after after prolonged exponsure to short wavelength radiation and which have effciencies in the far ultraviolet close to those predicted using a value of 3.63 eV for electron-hole pair production in Si. Quatum efficiency and stability data are presented in the 6-124-eV region for several variations on the basic successful design and on the devices with exremely thin silicon dioxide antireflecting passivating layers.

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