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Low Pressure Chemical Vapor Deposition Systems

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Low Pressure Chemical Vapor Deposition Systems

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LPCVD deposition systems typically operate at pressures that range from 0.1 to 10 Torr. The reader will recall that this is considered a medium vacuum application. Reactor configurations that have been used for LPCVD thin film processes include resistance heated tubular hot-wall reactors, vertical flow batch reactors and single-wafer reactors. Throughout the latter part of the 20th Century, much LPCVD processing was performed in horizontal hot-wall tube reactors. These reactors could process 100 or more wafers simultaneously and were very successful in depositing LPCVD silicon dioxide, silicon nitride and polysilicon thin films.

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