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Isotropic Radical Etching

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Isotropic Radical Etching

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High pressure plasma etching processes typically operate around 0.2 - 2 Torr. These are glow discharge methods that etch material via a chemical rather than a physical mechanism. The process pressures employed in plasma etching result in very low mean free paths for the ions generated in the plasma preventing any contribution from ion bombardment in the etching process. Thus, while plasma etching exhibits relatively good material selectivity, the purely chemical nature of the etching action results in primarily isotropic rather than anisotropic etching characteristics; this makes plasma etching of limited use in VLSI and ULSI device fabrication.

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