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Ion Implantation

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Ion Implantation

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The primary means of doping silicon for semiconductor device manufacturing have been ion implantation, gas source doping, and solid source doping. Ion implantation is by far the most important mode of introducing dopant atoms into silicon substrates and it will be the only method discussed here. Readers interested in older methods such as gas and solid source doping are referred to standard texts for further information. We will only provide a brief discussion of the basic aspects of ion implantation here. Those interested in developing an in-depth understanding of the issues associated with ion implantation are directed to texts on VLSI and Ultra Large Scale Integration (ULSI) Technologies and to available monographs on ion implantation.

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