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Thermal Oxidation

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Thermal Oxidation

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Thermal oxide (silicon dioxide) is a silicon dioxide film produced by the oxidation of substrate silicon, usually at temperatures in excess of 1000°C. Thermal oxides can be grown using a "dry" oxidation process or a "wet" oxidation process: Dry oxidations are typically performed at 900°C - 1200°C at high oxygen pressures. Dry oxidations exhibit the lowest oxide growth rate of the thermal oxidation processes used in semiconductor device manufacture, typically around 14 - 25 nm/hr. "Wet" oxidations can be performed using either entrained water or in situ generated steam produced by the reaction of hydrogen and water.

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