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CMOS Wafer Processing

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CMOS Wafer Processing

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The initial step in the CMOS process is the formation of a "pad" thermal silicon dioxide layer on the wafer surface. The pad oxide relieves stress between the substrate and the subsequent silicon nitride layer (see below), diminishing stress-induced dislocations in the substrate (thick nitride layers can induce such dislocations). Silicon dioxide's excellent electrical properties and the fact that thin films of the material can be formed by direct oxidation of the substrate have made thermal silicon dioxide the primary insulating film material employed in semiconductor device manufacture.

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