Silicon Photodiodes with Stable, Near-theoretical Quantum Efficiency in the Soft X-ray Region

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Silicon Photodiodes with Stable, Near-theoretical Quantum Efficiency in the Soft X-ray Region

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  • Author: Raj Korde, L. Randall Canfield
Silcon photodiodes having practically no carrier recombination at the Si-Si02 interface or in the front diffiused region have been developed by detect-free n-type impurity diffusion into p-type silicon. These photodiodes exhibit very high quatum efficiences in the 10 eV to 150 eV photon energy region, typically 37 electrons per photon at 150 eV, which is about 300 times the quantum efficiency of the more commonly use photoemissive type soft X-ray detectors.

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