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Mass and Charge Overlaps in Beamline Implantation and SIMS Analysis of Compound Semiconductor Materials

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Mass and Charge Overlaps in Beamline Implantation and SIMS Analysis of Compound Semiconductor Materials

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  • Author: M.I. Current, R. Eddy, C Hudak, J. Serfass, G. Mount
Mass overlaps occurring as a result of extraction of ions from an arc discharge and gas collisions producing molecular break up and charge exchange in the accelerator beamline are examined for ion implantation into compound semiconductors. The effect of the choice of plasma gas elements for Be+ implants is examined as an example The next steps in the continuing drive to increase IC device performance are set to include a shift to high-mobility channel materials for both planar and finFET devices, these being among the “last knobs” available in the continued quest for increased CMOS transistor and IC device performance [1,2].

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