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Contamination Control in Ion Implantation - An Additional Approach

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Contamination Control in Ion Implantation - An Additional Approach

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  • Author: R. Eddy, D. Doi, I.Santos, W.Wriggins
The requirements for ever decreasing demand in the levels of elemental contamination places considerable restraint on ion implanter beamline and target chamber design. Much effort is put on the materials selection and the geometry of critical beam strike components such as apertures, electron flood assemblies, beam dumps, platens and other components. Many papers [1 - 3] have been produced over the years that show typical performance for the time of their publication.

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