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Correlation Of Measured Surface Contaminants As A Function Of Ion Beam Current In GSD Ion Implanters

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Correlation Of Measured Surface Contaminants As A Function Of Ion Beam Current In GSD Ion Implanters

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  • Author: Ron Johnson, Ron Eddy, John Schuur
Analysis of surface contaminants for most semiconductor manufacturing equipment is a mandatory activity to ensure on-going process integrity. In ion implantation, the nature of the interaction of the ion beam with the materials of construction of the machine is of primary concern. In addition to run to run variability of internal cleanliness of a particular machine, there can be run to run variability in ion source and beamline settings that cause variations ion beam current density, et cetera.

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