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Micro Four-Point Probe with High Spatial Resolution for Ion Implantation and Ultra Shallow Junction Characterization

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Micro Four-Point Probe with High Spatial Resolution for Ion Implantation and Ultra Shallow Junction Characterization

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  • Author: Daniel Kjaer, Rong Lin, Dirch Hjorth Petersen, Petros M. Kopalidis, Ronald Eddy, David A. Walker, William F. Egelhoff, Jr., Larry Pickert
The application of micro four-point probe technique in ion implantation non-uniformity mapping and analysis is demonstrated in this work. The technique uses micron-size probes with electrode pitch of 10 µm to achieve greatly enhanced spatial resolution of sheet resistance (Rs) measurements. Rs non-uniformities due to uneven dopant distribution or activation can be mapped with improved accuracy, making it easier to detect implanter scanning problems, dose and charge control malfunctions and annealer related non-uniformities.

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