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Determining the Fermi Thermal Shift of Silicon Semiconductor Wafers Using Temperature-Dependent Raman Microscopy

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Determining the Fermi Thermal Shift of Silicon Semiconductor Wafers Using Temperature-Dependent Raman Microscopy

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  • Author: Matthew Berry
As semiconductor devices get smaller and their power densities increase, understanding temperature effects at the micro- and nanoscale becomes increasingly important. Temperature-dependent (TD) Raman microscopy is a powerful and non-destructive method that can probe the thermal and electronic properties of semiconductor materials with submicron spatial resolution.

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