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Raman Spectroscopy of Silicon Carbide Semiconductor Wafers

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Raman Spectroscopy of Silicon Carbide Semiconductor Wafers

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  • Author: Matthew Berry
Silicon carbide (SiC) is a semiconductor regularly used in transistors for high-power electronic devices such as inverters in electric vehicles and solar panel grids. In this Application Note, we use the Edinburgh Instruments RM5, to demonstrate that Raman microscopy is the ideal technique for identifying structural and electronic parameters in SiC rapidly, reproducibly, non-destructively, and without direct contact.

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