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Measuring Photoluminescent Properties of Gallium Nitride (GaN)

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Measuring Photoluminescent Properties of Gallium Nitride (GaN)

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  • Author: Iona Hill
Gallium nitride (GaN) has emerged as a leading material in the semiconductor industry, offering significant advantages over traditional silicon-based technologies. This Application Note demonstrates the use of an Edinburgh Instruments FLS1000 Photoluminescence Spectrometercoupled to an external picosecond pulsed UV laser to perform both steady-state and time-resolved PL measurements of GaN.

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