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Ozone as the Oxidizing Precursor in Atomic Layer Deposition

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Ozone as the Oxidizing Precursor in Atomic Layer Deposition

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  • Author: Hans Sundstrom
Ozone is being developed as the preferred oxidizing precursor for numerous ALD thin film applications, precisely because of the advantageous properties discussed above. As noted, it is already employed in production ALD processes for the formation of Al2O3 capacitor dielectric layers in advanced DRAMs. Ozone/ALD of Al2O3 is also finding application in MEMS structures as abrasion resistant coatings on actuators and in disk drives where ozone/ALD Al2O3 is being used as a Reader isolation layer on recording heads.

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