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R*evolution® III Remote Plasma Source: Low Particle Performance in O2 / N2 Photoresist Ashing

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R*evolution® III Remote Plasma Source: Low Particle Performance in O2 / N2 Photoresist Ashing

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The R*evolution III, an integrated remote plasma source with improved performance over the earlier R*evolution I model, generates and delivers activated species required in a variety of semiconductor processes. Reactive gas generators are used in semiconductor processes such as photoresist ashing and thin film nitridation and oxidation. The plasma chamber within the R*evolution III remote source is a toroidal confinement vessel fabricated from a semiconductor-grade fused quartz, a noncrystalline high purity form of silicon dioxide.

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