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An Effective Method For Photoresist Removal Using Microwave Plasma Ashing

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An Effective Method For Photoresist Removal Using Microwave Plasma Ashing

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As semiconductor device size shrinks deeper into the nanometer scale, surface topography becomes increasingly complex. This complexity creates significant challenges in device fabrication, not the least of which is the effective removal of photoresist residue (ashing) following an etch or implant step. Extreme topographies can cause problems with the uniform distribution of reactive radicals in occluded areas on a substrate surface leading to poor penetration in deep trenches or structures exhibiting re-entrant angles. The material and chemical characteristics of resist residues may vary across a substrate resulting in poor resist removal rate uniformity.

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