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Tapered Amplifiers for High-Power MOPA Setups between 750nm and 2000nm

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Tapered Amplifiers for High-Power MOPA Setups between 750nm and 2000nm

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  • Author: L. Ogrodowski, P. Friedmann, J. Gilly, M.T.Kelemen
Semiconductor laser diodes with a tapered gain region provide a beam quality near to the diffraction limit combined with high output power. They can be configured as lasers with a high-reflectivity coating on the rear facet as well as amplifiers with an antireflection coating on both facets. In amplifier configuration, they can be used in external cavity or Master-Oscillator-Power-Amplifier configuration with the advantage of a narrow linewidth. Today amplifiers are commercially established with an optical output-power of 1-3W in a wide range of applications in quantum optics, metrology or spectroscopy.

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