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Ozone Applications in Atomic Layer Processing

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Ozone Applications in Atomic Layer Processing

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Ozone, O3 , is a uniquely effective oxidizer for atomic layer processing. lt is a highly reactive, gaseous oxidizing agent with a well-established record as a very strong oxidant used in many industrial settings. Beginning in the 1990s, ozone was also employed as an oxidant in CVD reactions, particularly tetraethoxysilane/ozone (TEOS/O3) silicon dioxide thin film deposition processes. The advent of ALP has created additional impetus for the adoption of ozone as an oxidizing agent in semiconductor thin film deposition processes. Ozone provides critical advantages over other oxidants for ALD when it comes to process behavior-thin film purity moieties and other contaminants, improving the electrical properties such as gate leakage in insulator films.

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